2SD215 Datasheet. Specs and Replacement
Type Designator: 2SD215
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
- BJT ⓘ Cross-Reference Search
2SD215 datasheet
0.2. Size:106K rohm
2sd2150.pdf 
Low Frequency Transistor (20V, 3A) 2SD2150 Features Dimensions(Unit mm) 1) Low VCE(sat). 2SD2150 VCE(sat) = 0.2V(Typ.) 4.5+0.2 -0.1 IC / IB = 2A / 0.1A 1.5+0.2 1.6 0.1 -0.1 2) Excellent current gain characteristics. 3) Complements the 2SB1424. (1) (2) (3) 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 Structure 0.4 0.1 1.5 0.1 1.5 0.1 Epitaxial planar type 3.0 0.2 ... See More ⇒
0.3. Size:158K rohm
2sd2153.pdf
High gain amplifier transistor (25V, 2A) 2SD2153 Features Dimensions (Unit mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 4.0 1.0 2.5 0.5 2) Excellent DC current gain characteristics. (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM MPT3 EIAJ SC-62 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collect... See More ⇒
0.4. Size:54K panasonic
2sd2151.pdf
Power Transistors 2SD2151 Silicon NPN epitaxial planar type For power switching Unit mm Features 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maxi... See More ⇒
0.6. Size:307K secos
2sd2150.pdf
2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics 1 Low Collector Saturation Voltage, 2 3 A VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A E C Collector B C E 2 B D 1 F G Base H K J L 3 ... See More ⇒
0.7. Size:1613K jiangsu
2sd2150.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) 2. COLLECTOR VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Un... See More ⇒
0.8. Size:432K jiangsu
2sd2153.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2153 TRANSISTOR (NPN) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR Excellent DC current gain characteristics 3. EMITTER MARKING DN MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 30 V VCEO... See More ⇒
0.9. Size:112K jiangsu
2sd2152.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD2152 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High DC Current Gain 3. BASE Low Saturation Medium Current Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage... See More ⇒
0.10. Size:224K lge
2sd2150.pdf
2SD2150 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR SOT-89 3. EMITTER 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Excellent current-to-gain characteristics 2.6 4.25 2.4 3.75 Low collector saturation voltage VCE(sat) 0.8 VCE(sat)=0.5V(max) for IC/IB=2A/0.1A MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) ... See More ⇒
0.11. Size:217K wietron
2sd2150.pdf
2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 20 VEBO V Emitter-Base Voltage 6 Collector Current IC 3 A Collector Power Dissipation PD 500 mW Junction Temperature Tj 150 C Tstg -55 t... See More ⇒
0.13. Size:298K blue-rocket-elect
2sd2159.pdf
2SD2159(BR3DA2159) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features Low saturation voltage. / Applications Medium power amplifier applications. / Equivalent Circuit / Pinning ... See More ⇒
0.14. Size:637K semtech
st2sd2150u.pdf
ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 6 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 5 1) 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature ... See More ⇒
0.15. Size:1160K kexin
2sd2150.pdf
SMD Type Transistors NPN Transistors 2SD2150 1.70 0.1 Features Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) Complementary to 2SB1412 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V ... See More ⇒
0.16. Size:959K kexin
2sd2153.pdf
SMD Type Transistors NPN Transistors 2SD2153 1.70 0.1 Features Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA Excellent DC current gain characteristics. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25... See More ⇒
0.17. Size:337K cn shikues
2sd2150r 2sd2150s.pdf
2SD2150 NPNGeneral use transistor 1.2W 3A 30V 4 Applications Can be used for switching and amplifying in 1 2 3 various electrical and electronic equipments. SOT-89 MAX RATING Parameters Symbol Rating Unit VCEO Collector emitter voltage IB=0 30 V VCBO V Collector base voltage IE=0 40 VEBO Emitter base voltage IC=0 5 V IC A Collector curren... See More ⇒
0.18. Size:201K inchange semiconductor
2sd2151.pdf
isc Silicon NPN Power Transistor 2SD2151 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 6A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
0.19. Size:216K inchange semiconductor
2sd2156.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2156 DESCRIPTION High DC Current gain Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D... See More ⇒
0.20. Size:201K inchange semiconductor
2sd2155.pdf
isc Silicon NPN Power Transistor 2SD2155 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Complement to Type 2SB1429 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency ampl... See More ⇒
Detailed specifications: 2SD2138, 2SD2139, 2SD214, 2SD2140, 2SD2141, 2SD2144, 2SD2148, 2SD2149, D882, 2SD2151, 2SD2155, 2SD2156, 2SD2157, 2SD2158, 2SD215F, 2SD216, 2SD2161
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