2SD2179 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1446 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum

Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1446 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum

Ordering number EN3196 NPN Epitaxial Planar Silicon Transistor 2SD2176 Motor Driver Applications Features Package Dimensions Darlington connection. unit mm On-chip Zener diode of 60 10V between collector 2038A and base. [2SD2176] High inductive load handling capability. 4.5 Small-sized package. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector

2SD2170 Transistors Medium Power Transistor +20 (Motor, Relay drive) (90 , 2A) -10 2SD2170 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 4.0 2) Zener diode has low dispersion. 1.0 2.5 0.5 3) Strong protection against reverse power surges due to (1) "L" loads. (2) 4) Darlington connection for high DC current gain. (3) (1) Base(Gat

Transistors 2SD2177 Silicon NPN epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency output amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1434 Features 0.65 max. Low collector to emitter saturation voltage VCE(sat) Ccomplementary pair with 2SB1434 Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 1 2 3 Abso

Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Absolute Maximum Ratings Ta = 25 C 0.7 0.1 0.7 0.1 Parameter Symbol Rating Unit 1.15 0.2 1.15 0.2 Collecto

Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3

Transistor 2SD2177 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1434 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1434. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum

SMD Type Transistors NPN Transistors 2SD2170 1.70 0.1 Features Built-in zener diode between collector and base. Zener diode has low dispersion. Darlington connection for high DC current gain. 0.42 0.1 0.46 0.1 Built-in resistor between base and emitter. C 1.Base 2.Collector 3.Emitter B R1 3.5k R2 300 R1 R2 E Absolute Maximum Ratings Ta = 25

SMD Type Transistors NPN Transistors 2SD2176 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

RoHS 2SD2137 2SD2137 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM 2 W (Tamb=25 ) 3. EMITTER Collector current 1 2 3 ICM 3 A Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter