2SD2180 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request

Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1440 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.

Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1440 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.

Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1438 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute

Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1438 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute

SMD Type Transistors NPN Transistors 2SD2185 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=50V Complementary to 2SB1440 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V

isc Silicon NPN Power Transistor 2SD218 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V (Max.)@ I = 7A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low saturation voltage Excellent current gain linearity ABSOLUTE MAXIMUM RATINGS(T =25