2SD219F Todos los transistores

 8.1. Size:141K  sanyo
 2sd2198.pdf

Ordering number EN3149 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1449/2SD2198 50V/5A Switching Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069B -Reduction in the number of manufacturing pro- [2SB1449/2SD2198] cesses for 2SB1449/2SD2198-applied equipment. -High density surface mount applications. -Small size of

 8.2. Size:104K  sanyo
 2sd2199.pdf

Ordering number EN3150 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1450/2SD2199 50V/7A Switching Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069B -Reduction in the number of manufacturing pro- [2SB1450/2SD2199] cesses for 2SB1450/2SD2199-applied equipment. -High density surface mount applications. -Small size of

 8.3. Size:66K  rohm
 2sd2195 2sd1980 2sd1867 2sd2398.pdf

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

 8.4. Size:67K  rohm
 2sd1867 2sd2195.pdf

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

 8.5. Size:902K  kexin
 2sd2195.pdf

SMD Type Transistors NPN Transistors 2SD2195 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=100V C Complementary to 2SB1580 0.42 0.1 0.46 0.1 B R1 R2 1.Base E R1 3.5k 2.Collector R2 300 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100

 8.6. Size:204K  inchange semiconductor
 2sd2196.pdf

isc Silicon NPN Darlington Power Transistor 2SD2196 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 10A, V = 3V FE C CE High Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25