2SD219F Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD219F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO37
2SD219F Transistor Equivalent Substitute - Cross-Reference Search
2SD219F Datasheet (PDF)
2sd2198.pdf
Ordering number:EN3149PNP/NPN Epitaxial Planar Silicon Transistors2SB1449/2SD219850V/5A Switching ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069B-Reduction in the number of manufacturing pro-[2SB1449/2SD2198]cesses for 2SB1449/2SD2198-applied equipment.-High density surface mount applications.-Small size of
2sd2199.pdf
Ordering number:EN3150PNP/NPN Epitaxial Planar Silicon Transistors2SB1450/2SD219950V/7A Switching ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069B-Reduction in the number of manufacturing pro-[2SB1450/2SD2199]cesses for 2SB1450/2SD2199-applied equipment.-High density surface mount applications.-Small size of
2sd2195 2sd1980 2sd1867 2sd2398.pdf
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)
2sd1867 2sd2195.pdf
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)
2sd2195.pdf
SMD Type TransistorsNPN Transistors2SD2195SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=100VC Complementary to 2SB15800.42 0.10.46 0.1BR1 R2 1.BaseER1 3.5k2.CollectorR2 3003.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100
2sd2196.pdf
isc Silicon NPN Darlington Power Transistor 2SD2196DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 10A, V = 3VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
