2SD2296 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2296
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO3P
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2SD2296 datasheet
2sd2296.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2296 DESCRIPTION With TO-3PN package High breakdown voltage APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYM
2sd2296.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2296 DESCRIPTION High Breakdown Voltage V = 1500V(Min) CBO High Switching Speed With TO-3PN Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
2sd2293.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2293 DESCRIPTION High Breakdown Voltage V = 1500V(Min) CBO High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sd2206.pdf
2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2206 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Cha
2sd2248.pdf
2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2248 Hammer Drive, Pulse Motor Drive Applications Unit mm For Inductive Load Drive High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) CE (sat) (I = 1 A, I = 1 mA) C B Built-in zener diode between collector and ba
2sd2257.pdf
2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) Low saturation voltage VCE (sat) = 1.5 V (max) Complementary to 2SB1495 Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 1
2sb1509 2sd2282.pdf
Ordering number EN3715 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1509/2SD2282 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2039A Features [2SB1509/2SD2282] Low collector-to-emitter saturation voltage VCE(sat)= 0.5V max. Wide ASO and highly registant to breakdown. Micaless package
2sd2219.pdf
Ordering number EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, etc. unit mm 2041A Features [2SB1468/2SD2219] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) ma
2sd2251.pdf
Ordering number EN3741A NPN Triple Diffused Planar Silicon Transistor 2SD2251 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2251] On-chip damper diode. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 Base 1
2sd2285.pdf
Ordering number EN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2039A Features [2SB1511/2SD2285] Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Large current capacity. Micaless p
2sd2218.pdf
Ordering number EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2041A Features [2SB1467/2SD2218] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max.
2sd2200.pdf
Ordering number EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069B -Reduction in the number of manufacturing pro- [2SB1451/2SD2200] cesses for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of
2sd2201.pdf
Ordering number EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069B -Reduction in the number of manufacturing pro- [2SB1452/2SD2201] cesses for 2SB1452/2SD2201-applied equipment. -High density surface mount applications. -Small size of
2sd2252.pdf
Ordering number EN3320 NPN Triple Diffused Planar Silicon Transistor 2SD2252 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD2252] 16.0 5.6 Features 3.4 3.1 High-speed tf=100ns. High breakdown voltage VCBO=1500V. High r
2sd2203.pdf
Ordering number EN3250 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1455/2SD2203 80V/7A High-Current Switching Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm Large current capacity. 2041A Micaless package facilitating easy mounting. [2SB1455/2SD2203] 1 Base 2 Collector 3 Emitter ( ) 2SB1455 SANYO TO-220ML Sp
2sd2281.pdf
Ordering number EN3714 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1508/2SD2281 50V/12A High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2039A Features [2SB1508/2SD2281] Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Wide ASO and highly registant to breakd
2sd2224.pdf
Ordering number EN3366 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1472/2SD2224 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049B [2SB1472/2SD2224] Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO. E
2sd2223.pdf
Ordering number EN3365 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1471/2SD2223 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049B [2SB1471/2SD2223] Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO. E
2sd2284.pdf
Ordering number EN3881 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1510/2SD2284 60V/3A Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit mm 2084 Features [2SB1510/2SD2284] High DC current gain. Good dependence of DC current gain. E Emitter C Collector ( ) 2SB1510 B Base SANYO FLP Specifications Absolu
2sd2261.pdf
Ordering number ENN5311A NPN Epitaxial Planar Silicon Transistor 2SD2261 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit mm 2038A Features [2SD2261] 4.5 Darlington connection. 1.5 1.6 High DC current gain. DC current gain is less affected by temperature. Small-sized package. 0.4 0.5 3 2 1 0.4 1.
2sd2202.pdf
Ordering number EN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm Large current capacity. 2041A Micaless package facilitating easy mounting. [2SB1454/2SD2202] 1 Base 2 Collector ( ) 2SB1454 3 Emitter SANYO TO-220ML Specifica
2sd2280.pdf
Ordering number EN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2039A Features [2SB1507/2SD2280] Low collector-to-emitter saturation voltage VCE(sat)=( )0.4V max. Wide ASO and highly registant to breakdown. Micales
2sd2230.pdf
DATA SHEET SILICON TRANSISTOR 2SD2230 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD2230 is an element realizing ultra low VCE(sat). This PACKAGE DRAWING (UNIT mm) transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES Low VCE(sat) VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA VCE(sat)2 = 150 mV TYP. @IC = 500 mA,
2sd2217.pdf
DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT mm) frequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers such as pulse moto
2sd2226k.pdf
2SD2226K Datasheet General Purpose Transistor (50V, 150mA) lOutline l SOT-346 Parameter Value SC-59 VCEO 50V IC 150mA SMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA) lApplication l Low frequency amplifier lPackagi
2sd2212 2sd2143 2sd1866.pdf
2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit mm) Features 1) Built-in zener diode between collector and base. 2SD2212 4.0 2) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1) (2) 3) Built-in resistor between base and emitter. (3) 4)
2sd2211 2sd1918 2sd1857a.pdf
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)
2sd2227s.pdf
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base
2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf
2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277
2sd2211.pdf
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)
2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2)
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base
2sd2240.pdf
Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification 1.6 0.15 0.4 0.8 0.1 0.4 Features High collector to emitter voltage VCEO. 1 Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings
2sd2276.pdf
Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1503 20.0 0.5 5.0 0.3 3.0 Features Optimum for 110W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)
2sd2258.pdf
Transistor 2SD2258 (Tentative) Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency output amplification 0.65 max. Features Darlington connection. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. 2.5 0.5 2.5 0.5 1 2 3 Absolute Maximum Ratings (Ta=25 C) Note In a
2sd2260 e.pdf
Transistor 2SD2260 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector breakdown voltage. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings
2sd2215.pdf
Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For power amplification 3.0 0.2 Features High collector to base voltage VCBO 1.1 0.1 0.85 0.1 I type package enabling direct soldering of the radiating fin to 0.75 0.1 0.4 0.1 the printed circuit board, etc. of small electronic equipment. 2.3 0.2 Absolute Maximum
2sd2249.pdf
Transistor 2SD2249 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolut
2sd2250.pdf
Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1490 20.0 0.5 5.0 0.3 3.0 Features Optimum for 80W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)
2sd2242.pdf
Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 High-speed switching Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0.1 0.35 0.1 1.05 0.1 Parameter Symbol Ratings Un
2sd2258 e.pdf
Transistor 2SD2258 (Tentative) Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency output amplification 0.65 max. Features Darlington connection. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. 2.5 0.5 2.5 0.5 1 2 3 Absolute Maximum Ratings (Ta=25 C) Note In a
2sd2249 e.pdf
Transistor 2SD2249 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolut
2sd2259.pdf
Transistor 2SD2259 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3
2sd2225.pdf
Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1473 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maxim
2sd2216 e.pdf
Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1462 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Rati
2sd2220.pdf
Power Transistors 2SD2220 Silicon NPN triple diffusion planar type Darlington For low-frequency amplification Unit mm 7.5 0.2 4.5 0.2 90 Features 0.65 0.1 0.85 0.1 Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward 1.0 0.1 0.8C 0.8C current transfer ratio hFE 0.7 0.1 0.7 0.1 A shunt r
2sd2216j e.pdf
Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1462J 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. +0.05 0.85 0
2sd2216.pdf
Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1462 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Rati
2sd2240 e.pdf
Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification 1.6 0.15 0.4 0.8 0.1 0.4 Features High collector to emitter voltage VCEO. 1 Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings
2sd2225 e.pdf
Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1473 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maxim
2sb1492 2sd2254 2sd2254.pdf
Power Transistors 2SD2254 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1492 20.0 0.5 5.0 0.3 3.0 Features Optimum for 60W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)
2sd2210.pdf
Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). 45 Low ON resistance Ron. High foward current transfer ratio hFE. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0
2sd2255.pdf
Power Transistors 2SD2255 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1493 15.0 0.5 4.5 0.2 13.0 0.5 10.5 0.5 2.0 0.1 Features Optimum for 60W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)
2sd2259 e.pdf
Transistor 2SD2259 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3
2sd2273.pdf
Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1500 20.0 0.5 5.0 0.3 3.0 Features Optimum for 40W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)
2sd2275.pdf
Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1502 20.0 0.5 5.0 0.3 3.0 Features Optimum for 55W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)
2sd2266.pdf
Power Transistors 2SD2266 Silicon NPN triple diffusion planar type For power switching Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High-speed switching 90 Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0.1 0.35 0.1 1.05 0.1 Parameter Symbol Ratings Unit
2sd2210 e.pdf
Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). 45 Low ON resistance Ron. High foward current transfer ratio hFE. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0
2sd2213.pdf
2SD2213 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 15 k 0.5 2. Collector (Typ) (Typ) 1 3. Base 3 2 1 2SD2213 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 8V Collector current
2sd2247.pdf
2SD2247 Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2247 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Emitter current IE 100 mA Collector power dis
2sd2256.pdf
2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features High breakdown voltage and high current (VCEO = 120 V, IC = 25 A) Built-in C-E diode Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1 3 2 3 2SD2256 Absolute Maximum Ratings (Ta = 25 C) Item
2sd2263.pdf
2SD2263 Silicon NPN Epitaxial Application Low frequency power amplifier Features Build in zener diode for surge absorb. Suitable for relay drive with small power loss. Outline TO-92 (1) 2 ID 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD2263 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter volt
2sd2253.pdf
2SD2253 Silicon NPN Triple Diffused Power Transistor GENERAL DESCRIPTION HORIZONAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV High Speed Switching Applications TO-3PM QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-Base voltage VCB0 - - 1700 V Collector-emitter voltage (open base) VCEO - 600 V Collector current (DC) IC - 6 A Collector curren
2sd2222.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2222 DESCRIPTION With TO-3PL package Complement to type 2SB1470 High forward current transfer ratio hFE Low saturation voltage VCE(sat) DARLINGTON APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out
2sd2230.pdf
SMD Type Transistors NPN Transistors 2SD2230 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=16V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collec
2sd2210.pdf
SMD Type Transistors NPN Transistors 2SD2210 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE
2sd2211.pdf
SMD Type Transistors NPN Transistors 2SD2211 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage
2sd2212.pdf
SMD Type Transistors NPN Transistors 2SD2212 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50V C 0.42 0.1 0.46 0.1 B R1 R2 1.Base E 2.Collector R1 3.5k R2 300 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCE
2sd2261.pdf
SMD Type Transistors NPN Transistors 2SD2261 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2.5A Collector Emitter Voltage VCEO=60V C 0.42 0.1 0.46 0.1 B 1.Base 2.Collector 7k 500 3.Emitter E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emit
2sd2276.pdf
isc Silicon NPN Darlington Power Transistor 2SD2276 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 7A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1503 Minimum Lot-to-Lot variations for robust device performance and reliable op
2sd2241.pdf
isc Silicon NPN Darlington Power Transistor 2SD2241 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1.5A, V = 3V FE C CE Complement to Type 2SB1481 Minimum Lot-to-Lot variations for robust device performance and reliable operation AP
2sd2250.pdf
isc Silicon NPN Darlington Power Transistor 2SD2250 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 6A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 6A, I = 6mA) CE(sat) C B Complement to Type 2SB1490 Minimum Lot-to-Lot variations for robust device performance and reliable op
2sd2251.pdf
isc Silicon NPN Power Transistor 2SD2251 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sd2222.pdf
isc Silicon NPN Darlington Power Transistor 2SD2222 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO High DC Current Gain- h = 3500( Min.) @(I = 7A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 3.0V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1470 Minimum Lot-to-Lot variations for robust device performance and reliable op
2sd226.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD226 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sd2256.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION High DC Current Gain hFE= 2000(Min.)@ IC= 12A, VCE= 4V High Collector-Emitter Breakdown Voltage- V(BR)CEO = 120V(Min) APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT
2sd2232.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2232 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High DC Current Gain h = 3000(Min) @ I = 5A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications ABSOL
2sd2257.pdf
isc Silicon NPN Darlington Power Transistor 2SD2257 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1.5A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Complement to Type 2SB1495 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications Hammer drive, p
2sd2253.pdf
isc Silicon NPN Power Transistor 2SD2253 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
2sd2271.pdf
isc Silicon NPN Darlington Power Transistor 2SD2271 DESCRIPTION High DC Current Gain- h = 500(Min)@ (V = 2V, I = 5A) FE CE C High Breakdown Voltage V (sus)=200V Min CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drive applications High current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sd2237.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2237 DESCRIPTION High DC Current Gain- hFE = 2000(Min)@ IC= 2A Low Collector Saturation Voltage- VCE(sat) = 2.0V(Max.) @IC= 5A Complement to Type 2SB1478 APPLICATIONS Designed for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PAR
2sd2275.pdf
isc Silicon NPN Darlington Power Transistor 2SD2275 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 4A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 4A, I = 4mA) CE(sat) C B Complement to Type 2SB1502 Minimum Lot-to-Lot variations for robust device performance and reliable op
2sd2236.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min.) Wide Area of Safe Operation Complement to Type 2SB1477 APPLICATIONS Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base
Otros transistores... 2SD2271 , 2SD227G , 2SD227O , 2SD227Y , 2SD228 , 2SD2293 , 2SD2294 , 2SD2295 , A42 , 2SD2297 , 2SD2298 , 2SD2299 , 2SD23 , 2SD2300 , 2SD2301 , 2SD231 , 2SD2311 .
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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