Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD2296 DESCRIPTION With TO-3PN package High breakdown voltage APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25) SYM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2296DESCRIPTIONHigh Breakdown Voltage: V = 1500V(Min)CBOHigh Switching SpeedWith TO-3PN PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2293DESCRIPTIONHigh Breakdown Voltage: V = 1500V(Min)CBOHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2206 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Cha

2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2248 Hammer Drive, Pulse Motor Drive Applications Unit: mm For Inductive Load Drive High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) CE (sat)(I = 1 A, I = 1 mA) C B Built-in zener diode between collector and ba

2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Complementary to 2SB1495 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 1

Ordering number:EN3715PNP/NPN Epitaxial Planar Silicon Transistors2SB1509/2SD2282High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2039AFeatures [2SB1509/2SD2282] Low collector-to-emitter saturation voltage :VCE(sat)=0.5V max. Wide ASO and highly registant to breakdown. Micaless package

Ordering number:EN3364PNP/NPN Epitaxial Planar Silicon Transistors2SB1468/2SD221930V/8A High-Speed Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, etc. unit:mm2041AFeatures [2SB1468/2SD2219] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) ma

Ordering number:EN3741ANPN Triple Diffused Planar Silicon Transistor2SD2251Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2251] On-chip damper diode.16.05.63.43.12.82.0 2.01.00.61 : Base1

Ordering number:EN3716PNP/NPN Epitaxial Planar Silicon Transistors2SB1511/2SD228530V/20A High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2039AFeatures [2SB1511/2SD2285] Low collector-to-emitter saturation voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Large current capacity. Micaless p

Ordering number:EN3363PNP/NPN Epitaxial Planar Silicon Transistors2SB1467/2SD2218General High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2041AFeatures [2SB1467/2SD2218] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) max.

Ordering number:EN3151PNP/NPN Epitaxial Planar Silicon Transistors2SB1451/2SD220080V/5A Switching ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069B-Reduction in the number of manufacturing pro-[2SB1451/2SD2200]cesses for 2SB1451/2SD2200-applied equipment.-High density surface mount applications.-Small size of

Ordering number:EN3152PNP/NPN Epitaxial Planar Silicon Transistors2SB1452/2SD220180V/7A Switching ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069B-Reduction in the number of manufacturing pro-[2SB1452/2SD2201]cesses for 2SB1452/2SD2201-applied equipment.-High density surface mount applications.-Small size of

Ordering number:EN3320NPN Triple Diffused Planar Silicon Transistor2SD2252Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD2252]16.05.6Features3.43.1 High-speed : tf=100ns. High breakdown voltage : VCBO=1500V. High r

Ordering number:EN3250PNP/NPN Epitaxial Planar Silicon Transistors2SB1455/2SD220380V/7A High-Current Switching ApplicationsFeatures Package Dimensions Low collector-to-emitter saturation voltage.unit:mm Large current capacity.2041A Micaless package facilitating easy mounting.[2SB1455/2SD2203]1 : Base2 : Collector3 : Emitter( ) : 2SB1455SANYO : TO-220MLSp

Ordering number:EN3714PNP/NPN Epitaxial Planar Silicon Transistors2SB1508/2SD228150V/12A High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2039AFeatures [2SB1508/2SD2281] Low collector-to-emitter saturation voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Wide ASO and highly registant to breakd

Ordering number:EN3366PNP/NPN Epitaxial Planar Silicon Transistors2SB1472/2SD2224Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049B[2SB1472/2SD2224]Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO.E :

Ordering number:EN3365PNP/NPN Epitaxial Planar Silicon Transistors2SB1471/2SD2223Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049B[2SB1471/2SD2223]Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO.E :

Ordering number:EN3881PNP/NPN Epitaxial Planar Silicon Transistors2SB1510/2SD228460V/3A Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit:mm2084Features [2SB1510/2SD2284] High DC current gain. Good dependence of DC current gain.E : EmitterC : Collector( ) : 2SB1510B : BaseSANYO : FLPSpecificationsAbsolu

Ordering number:ENN5311ANPN Epitaxial Planar Silicon Transistor2SD2261Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit:mm2038AFeatures [2SD2261]4.5 Darlington connection.1.51.6 High DC current gain. DC current gain is less affected by temperature. Small-sized package.0.4 0.53 2 10.41.

Ordering number:EN3249PNP/NPN Epitaxial Planar Silicon Transistors2SB1454/2SD2202High-Current Switching ApplicationsFeatures Package Dimensions Low collector-to-emitter saturation voltage.unit:mm Large current capacity.2041A Micaless package facilitating easy mounting.[2SB1454/2SD2202]1 : Base2 : Collector( ) : 2SB14543 : EmitterSANYO : TO-220MLSpecifica

Ordering number:EN3713PNP/NPN Epitaxial Planar Silicon Transistors2SB1507/2SD228050V/7A High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2039AFeatures [2SB1507/2SD2280] Low collector-to-emitter saturation voltage :VCE(sat)=()0.4V max. Wide ASO and highly registant to breakdown. Micales

DATA SHEETSILICON TRANSISTOR2SD2230NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSThe 2SD2230 is an element realizing ultra low VCE(sat). This PACKAGE DRAWING (UNIT: mm)transistor is ideal for muting such as stereo recorders, VCRs,and TVs.FEATURES Low VCE(sat):VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mAVCE(sat)2 = 150 mV TYP. @IC = 500 mA,

DATA SHEETDARLINGTON POWER TRANSISTOR2SD2217NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2217 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)frequency power amplifiers and low-speed switching. Thistransistor is ideal for direct driving from the IC out to drivers such aspulse moto

2SD2226KDatasheetGeneral Purpose Transistor (50V, 150mA)lOutlinel SOT-346 Parameter Value SC-59 VCEO50VIC150mASMT3lFeatures lInner circuitl l1)High DC current gain.2)High emitter-base voltage. (VCBO=12V)3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA)lApplicationlLow frequency amplifierlPackagi

2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2SD22124.02) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1)(2)3) Built-in resistor between base and emitter. (3)4)

2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base

Transistor2SD2240, 2SD2240ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification1.6 0.150.4 0.8 0.1 0.4FeaturesHigh collector to emitter voltage VCEO.1Low noise voltage NV.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings

Power Transistors2SD2276Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150320.0 0.5 5.0 0.33.0FeaturesOptimum for 110W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Transistor2SD2258 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.5 0.5 2.5 0.51 2 3Absolute Maximum Ratings (Ta=25C)Note: In a

Transistor2SD2260Silicon NPN triple diffusion planer typeFor high breakdown voltage general amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh collector breakdown voltage.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings

Power Transistors2SD2215, 2SD2215ASilicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.2For power amplification3.0 0.2Features High collector to base voltage VCBO1.1 0.1 0.85 0.1 I type package enabling direct soldering of the radiating fin to0.75 0.1 0.4 0.1the printed circuit board, etc. of small electronic equipment.2.3 0.2Absolute Maximum

Transistor2SD2249Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolut

Power Transistors2SD2250Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149020.0 0.5 5.0 0.33.0FeaturesOptimum for 80W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SD2242, 2SD2242ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90High-speed switchingAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0.10.35 0.1 1.05 0.1Parameter Symbol Ratings Un

Transistor2SD2258 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.5 0.5 2.5 0.51 2 3Absolute Maximum Ratings (Ta=25C)Note: In a

Transistor2SD2249Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolut

Transistor2SD2259Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3

Transistor2SD2225Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB14732.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO of 120V.Optimum for low-frequency driver amplification. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maxim

Transistor2SD2216Silicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB14621.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Rati

Power Transistors2SD2220Silicon NPN triple diffusion planar type DarlingtonFor low-frequency amplificationUnit: mm7.5 0.2 4.5 0.290Features0.65 0.1 0.85 0.1Suitable for the driver circuit of a motor, a printer hammer andlike that, since this transistor is designed for the high forward1.0 0.10.8C 0.8Ccurrent transfer ratio hFE0.7 0.1 0.7 0.1A shunt r

Transistor2SD2216JSilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1462J1.60 0.050.80 0.80 0.050.425 0.425FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.+0.050.850

Transistor2SD2216Silicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB14621.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Rati

Transistor2SD2240, 2SD2240ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification1.6 0.150.4 0.8 0.1 0.4FeaturesHigh collector to emitter voltage VCEO.1Low noise voltage NV.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings

Transistor2SD2225Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB14732.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO of 120V.Optimum for low-frequency driver amplification. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maxim

Power Transistors2SD2254Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149220.0 0.5 5.0 0.33.0FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Transistor2SD2210Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).45Low ON resistance Ron.High foward current transfer ratio hFE.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0

Power Transistors2SD2255Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB149315.0 0.5 4.5 0.213.0 0.510.5 0.5 2.0 0.1FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Transistor2SD2259Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3

Power Transistors2SD2273Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150020.0 0.5 5.0 0.33.0FeaturesOptimum for 40W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SD2275Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150220.0 0.5 5.0 0.33.0FeaturesOptimum for 55W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SD2266Silicon NPN triple diffusion planar typeFor power switchingUnit: mm5.0 0.1Features 10.0 0.2 1.0High-speed switching90Satisfactory linearity of foward current transfer ratio hFEAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0.10.35 0.1 1.05 0.1Parameter Symbol Ratings Unit

Transistor2SD2210Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).45Low ON resistance Ron.High foward current transfer ratio hFE.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0

2SD2213Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter15 k 0.5 2. Collector (Typ) (Typ)13. Base3212SD2213Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 8VCollector current

2SD2247Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD2247Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mAEmitter current IE 100 mACollector power dis

2SD2256Silicon NPN Triple DiffusedADE-208-928 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifier complementary pair with 2SB1494Features High breakdown voltage and high current (VCEO = 120 V, IC = 25 A) Built-in C-E diodeOutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter13232SD2256Absolute Maximum Ratings (Ta = 25C)Item

2SD2263Silicon NPN EpitaxialApplicationLow frequency power amplifierFeatures Build in zener diode for surge absorb. Suitable for relay drive with small power loss.OutlineTO-92 (1)2ID31. Emitter2. Collector3. Base13212SD2263Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter volt

2SD2253Silicon NPN Triple Diffused Power TransistorGENERAL DESCRIPTION HORIZONAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TVHigh Speed Switching ApplicationsTO-3PMQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-Base voltageVCB0 - - 1700 VCollector-emitter voltage (open base)VCEO - 600 VCollector current (DC)IC - 6 ACollector curren

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2222 DESCRIPTION With TO-3PL package Complement to type 2SB1470 High forward current transfer ratio hFE Low saturation voltage VCE(sat) DARLINGTON APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified out

SMD Type TransistorsNPN Transistors2SD2230SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=16V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collec

SMD Type TransistorsNPN Transistors2SD2210SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SD2211SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage

SMD Type TransistorsNPN Transistors2SD2212SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50VC0.42 0.10.46 0.1BR1 R21.BaseE2.CollectorR1 3.5kR2 300 3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCE

SMD Type TransistorsNPN Transistors2SD2261SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2.5A Collector Emitter Voltage VCEO=60VC0.42 0.10.46 0.1B1.Base2.Collector7k 5003.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emit

isc Silicon NPN Darlington Power Transistor 2SD2276DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1503Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2241DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1.5A, V = 3VFE C CEComplement to Type 2SB1481Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

isc Silicon NPN Darlington Power Transistor 2SD2250DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 6A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 6A, I = 6mA)CE(sat) C BComplement to Type 2SB1490Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD2251DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Darlington Power Transistor 2SD2222DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh DC Current Gain-: h = 3500( Min.) @(I = 7A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 3.0V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1470Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD226DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2232DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh DC Current Gain: h = 3000(Min) @ I = 5A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage switching applicationsABSOL

isc Silicon NPN Darlington Power Transistor 2SD2257DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEComplement to Type 2SB1495Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsHammer drive, p

isc Silicon NPN Power Transistor 2SD2253DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon NPN Darlington Power Transistor 2SD2271DESCRIPTIONHigh DC Current Gain-: h = 500(Min)@ (V = 2V, I = 5A)FE CE CHigh Breakdown Voltage :V (sus)=200VMinCEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drive applicationsHigh current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2237 DESCRIPTION High DC Current Gain- : hFE = 2000(Min)@ IC= 2A Low Collector Saturation Voltage- : VCE(sat) = 2.0V(Max.) @IC= 5A Complement to Type 2SB1478 APPLICATIONS Designed for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PAR

isc Silicon NPN Darlington Power Transistor 2SD2275DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 4A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 4A, I = 4mA)CE(sat) C BComplement to Type 2SB1502Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) Wide Area of Safe Operation Complement to Type 2SB1477 APPLICATIONS Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base