2SD2342B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2342B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de transistor bipolar 2SD2342B
2SD2342B Datasheet (PDF)
2sd2345.pdf
Transistor2SD2345Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Low noise voltage NV.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to b
2sd2345 e.pdf
Transistor2SD2345Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Low noise voltage NV.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to b
2sd2340.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2340DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 3AFE CLow Collector Saturation Voltgae-: V = 2.5V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudior
2sd2348.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2348DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Saturation VoltageHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sd234.pdf
isc Silicon NPN Power Transistor 2SD234DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB434Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXI
2sd2349.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2349DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Saturation VoltageHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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