2SD2381 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1558 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1557 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2384 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1555 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1556 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

DATA SHEETSILICON TRANSISTOR2SD2383NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SD2383 is an element realizing high voltage in small 2.8 0.2dimension. This transistor is ideal for downsizing sets +0.10.65 0.151.5requiring high voltage. 2FEATURES High voltage 3 Small dimension 1 ORDERING

Power Transistor 2SD2382Absolute Maximum Ratings Electrical Characteristics External Dimensions FM20 (full-mold)(Ta=25C) (Ta=25C)Symbol Ratings Unit Symbol Test Conditions Ratings Unit4.2V 65 5 V I V = 60V 10max ACBO CBO CB 10.03.32.8C0.5V 65 5 V I V = 6V 10max ACEO EBO EB V 6 V V I = 50mA 60 to 70 VEBO CEO C I 6 (pulse 10) A h V = 1V, I = 1A 700

Equivalent circuit CBDarlington 2SD2389(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2389 Symbol Conditions 2SD2389 UnitUnit0.24.80.415.6VCBO 160 ICBO VCB

SMD Type TransistorsNPN Transistors2SD2383SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=300V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collec

isc Silicon NPN Darlington Power Transistor 2SD2389DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 6A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 6A, I = 6mA)CE(sat) C BComplement to Type 2SB1559Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION With TO-3P(I) package Complement to type 2SB1557 High breakdown voltage:VCEO=140V(Min) APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Emitte

isc Silicon NPN Darlington Power Transistor 2SD2384DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000(Min)@I = 6AFE CComplement to Type 2SB1555Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Darlington Power Transistor 2SD2385DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000(Min)@I = 7AFE CComplement to Type 2SB1556Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)