Справочник транзисторов. 2SD2381

 

Биполярный транзистор 2SD2381 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD2381
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO3PFM

 Аналоги (замена) для 2SD2381

 

 

2SD2381 Datasheet (PDF)

 8.1. Size:178K  toshiba
2sd2387.pdf

2SD2381
2SD2381

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1558 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

 8.2. Size:173K  toshiba
2sd2386.pdf

2SD2381
2SD2381

2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1557 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

 8.3. Size:175K  toshiba
2sd2384.pdf

2SD2381
2SD2381

2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2384 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1555 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

 8.4. Size:179K  toshiba
2sd2385.pdf

2SD2381
2SD2381

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1556 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 5 V

 8.5. Size:114K  nec
2sd2383.pdf

2SD2381
2SD2381

DATA SHEETSILICON TRANSISTOR2SD2383NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SD2383 is an element realizing high voltage in small 2.8 0.2dimension. This transistor is ideal for downsizing sets +0.10.65 0.151.5requiring high voltage. 2FEATURES High voltage 3 Small dimension 1 ORDERING

 8.6. Size:39K  no
2sd2382.pdf

2SD2381

Power Transistor 2SD2382Absolute Maximum Ratings Electrical Characteristics External Dimensions FM20 (full-mold)(Ta=25C) (Ta=25C)Symbol Ratings Unit Symbol Test Conditions Ratings Unit4.2V 65 5 V I V = 60V 10max ACBO CBO CB 10.03.32.8C0.5V 65 5 V I V = 6V 10max ACEO EBO EB V 6 V V I = 50mA 60 to 70 VEBO CEO C I 6 (pulse 10) A h V = 1V, I = 1A 700

 8.7. Size:25K  sanken-ele
2sd2389.pdf

2SD2381

Equivalent circuit CBDarlington 2SD2389(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2389 Symbol Conditions 2SD2389 UnitUnit0.24.80.415.6VCBO 160 ICBO VCB

 8.8. Size:629K  kexin
2sd2383.pdf

2SD2381
2SD2381

SMD Type TransistorsNPN Transistors2SD2383SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=300V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collec

 8.9. Size:206K  inchange semiconductor
2sd2389.pdf

2SD2381
2SD2381

isc Silicon NPN Darlington Power Transistor 2SD2389DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 6A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 6A, I = 6mA)CE(sat) C BComplement to Type 2SB1559Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

 8.10. Size:83K  inchange semiconductor
2sd2386.pdf

2SD2381
2SD2381

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION With TO-3P(I) package Complement to type 2SB1557 High breakdown voltage:VCEO=140V(Min) APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Emitte

 8.11. Size:204K  inchange semiconductor
2sd2384.pdf

2SD2381
2SD2381

isc Silicon NPN Darlington Power Transistor 2SD2384DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000(Min)@I = 6AFE CComplement to Type 2SB1555Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.12. Size:204K  inchange semiconductor
2sd2385.pdf

2SD2381
2SD2381

isc Silicon NPN Darlington Power Transistor 2SD2385DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000(Min)@I = 7AFE CComplement to Type 2SB1556Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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