2SD24Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm High breakdown voltage: VCBO = 100 V : V = 18 V EBO Low saturation voltage: V = 1.2 V (max) (I = 5 A, I = 1 A) CE (sat) C B High speed: t = 1 s (typ.) (I = 5 A, I = 0.5 A) f C B High DC current gain: h = 200 (min) (V = 5 V, I = 0.5 A) FE CE CMaximum Ra

2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL

2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.1 A) CE C Low saturation voltage: V = 0.3 V (typ.) (I = 0.5 A, I = 5 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter v

2SD2481 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD2481 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Characteristics

2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2449 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1594 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VCEO 160 VEmitter-base voltage VEBO 5 V

2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm High power dissipation: PC = 25 W (Tc = 25C) Good hFE linearity Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO 80 VEmitter-base voltage VEBO 5 VCollector current IC 4 A

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.2 A) CE C Low saturation voltage: V = 0.4 V (typ.) (I = 1 A, I = 10 mA) CE (sat) C B Complementary to 2SB1602 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage

2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.4 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATI

2SD2414(SM) TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Unit: mm Power Amplifier Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at I = 4 A) CMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 100 VCollector-emitter voltage VCEO 80 VEmitter-base vo

2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Cha

Ordering number:EN4716NPN Epitaxial Planar Silicon Transistor2SD242680V/2A Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2084B[2SD2426]4.5Features1.9 2.610.51.2 1.4 Darlington connection. High DC current gain.1.20.51.60.51 2 31 : Emitter2 : Collector

DATA SHEETSILICON TRANSISTOR2SD2403NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2403 is a transistor featuring high current PACKAGE DRAWING (UNIT: mm)capacitance in small dimension. This transistor is ideal forDC/DC converters and motor drivers.FEATURES High current capacitance Low collector saturation voltage Co

DATA SHEETSILICON TRANSISTOR2SD2463NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING (UNIT: mm)chip dumper diode in collector to emitter and zener diode incollector to base. This transistor is ideal for use in acuatordrives such as motors, relays, and solenoids.FE

DATA SHEETSILICON TRANSISTOR2SD2425NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2425 is a transistor featuring high current PACKAGE DRAWING (UNIT: mm)capacitance in small dimension. This transistor is ideal forDC/DC converters and motor drivers.FEATURES New package with dimensions in between those of smallsignal and powe

DATA SHEETSILICON TRANSISTOR2SD2402NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2402 is a transistor featuring high current PACKAGE DRAWING (UNIT: mm)capacitance in small dimension. This transistor is ideal forDC/DC converters and motor drivers.FEATURES High current capacitance Low collector saturation voltage Co

2SD2444K Transistors Power Transistor (15V, 1A) 2SD2444K Features External dimensions (Unit : mm) 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) SMT3at IC / IB = 0.4A / 20mA. 2) IC = 1A 2.9 1.10.4 0.83) Complements the 2SB1590K. (3)(2) (1) Packaging specification and hFE 0.95 0.950.151.9Type 2SD2444K(1)EmitterSMT3Package(2)BaseEach lead has same

2SB1616TransistorsTransistors2SD2478(SPEC-B426)(94L-1129-D426)301

2SB1590KTransistorsTransistors2SD2444K(96-150-B218)(96-247-D218)293Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference o

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

Power Transistors2SD2466, 2SD2466ASilicon NPN epitaxial planar typeFor low-voltage switchingComplementary to 2SB1604Unit: mmFeatures4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Rat

Transistor2SD2459Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 0.4

Power Transistors2SD2479Silicon NPN epitaxial planar typeUnit: mmFor low-frequency amplification7.50.2 4.50.2 Features High forward current transfer ratio hFE0.650.1 0.850.1 Allowing supply with the radial taping 0.8 C 0.8 C1.00.10.70.10.70.11.150.2 Absolute Maximum Ratings Ta = 25C1.150.2Parameter Symbol Rating Unit0.50.1 0.4

Transistor2SD2460Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 20 V1.27 1.27C

Transistor2SD2457Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2High collector to emitter voltage VCEO.Large collector power dissipation PC. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.

Transistor2SD2416Silicon NPN epitaxial planer type darlingtonFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High foward current transfer ratio hFE.60V zener diode built in between collector and base.45Darlington connection.Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the

Transistor2SD2474Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB16121.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.040.

Power Transistors2SD2467Silicon NPN epitaxial planar typeFor power switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink wi

Transistor2SD2416Silicon NPN epitaxial planer type darlingtonFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High foward current transfer ratio hFE.60V zener diode built in between collector and base.45Darlington connection.Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the

Transistor2SD2441Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 450.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0.153 2 1

Transistor2SD2460Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 20 V1.27 1.27C

Power Transistors2SD2465, 2SD2465ASilicon NPN epitaxial planar typeFor low-voltage switchingComplementary to 2SB1603Unit: mmFeatures4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 3.2 0.1 High-speed switching Full-pack package superior in insulation, which can be installedto the heat sink with one screwAbsolute Maximum Ratings (T

Transistor2SD2413Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.45Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.4 0.08Mini Power type package, allowing downsizing of th

Power Transistors2SD2468Silicon NPN epitaxial planar typeFor power switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink wi

Transistor2SD2413Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.45Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.4 0.08Mini Power type package, allowing downsizing of th

Power Transistors2SD2420Silicon NPN triple diffusion planer type DarlingtonUnit: mmFor power amplification 4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE: 2 000 to 10 000 Dielectric breakdown voltage of the package: > 5 kV1.40.22.60.11.60.2 Absolute Maximum Ratings TC = 25C0.80.1 0.550.15Parameter Symbol Rati

Transistor2SD2457Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2High collector to emitter voltage VCEO.Large collector power dissipation PC. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.

Transistor2SD2441Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 450.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0.153 2 1

Transistor2SD2459Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 0.4

Power Transistors2SD2453Silicon NPN triple diffusion planar typeUnit: mm6.50.1For high current transfer ratio and power amplification2.30.15.30.14.350.10.50.1 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)1.00.10.10.050.50.10.750.1 Absolute Maximum Ratings Ta = 25C2.30.1(5

Power Transistors2SD2469, 2SD2469ASilicon NPN epitaxial planar typeFor power switchingComplementary to 2SB1607Unit: mmFeatures 4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in-

Power Transistors2SD2486Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High forward current transfer ratio hFE which has satisfactorylinearity 3.1 0.1Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat si

UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS FEATURES * Low saturation voltage V= 0.25V(typ) at IC/IB= 3A/0.1A 1* Collector current of 5A is possible TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD2470L-x-T9S-B 2SD2470G-x-T9S-B TO-92SP E C B Tape Box2SD2

2SD2423Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierFeaturesThe transistor with a built-in zener diode of surge absorb.OutlineUPAK2, 41231ID41. Base2. Collector2 k 0.5 3. Emitter(Typ) (Typ)4. Collector (Flange)32SD2423Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50

2SD2491, 2SD2492Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierFeatures Isolated packageTO-126FMOutlineTO-126FM1. Emitter2. Collector3. Base1232SD2491, 2SD2492Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD2491 2SD2492 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to b

100 Max200 A)100 Max200 V 6500-20000 (P) (Y). . .V V Max120 TY P 10 0

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2493 DESCRIPTION With TO-3PN package Complement to type 2SB1624 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=) SYMBOL PA

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2439 DESCRIPTION With TO-3PML package Complement to type 2SB1588 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2401 DESCRIPTION With MT-200 package Complement to type 2SB1570 DARLINGTON APPLICATIONS Audio, Series Regulator and General Purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (MT-200) and symbol Absolute maximum r

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2438 DESCRIPTION With TO-3PML package Complement to type 2SB1587 APPLICATIONS Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITION

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2494 DESCRIPTION With TO-3PML package Complement to type 2SB1625 APPLICATIONS Audio, Series regulator General Purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITI

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION With TO-220F package Complement to type 2SB1626 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL PARA

Equivalent circuitCBDarlington 2SD2493(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)2SD2493Symbol 2SD2493 Symbol Conditions UnitUnit0.24.80.415.6100max AVCB

Equivalent circuit CBDarlington 2SD2439(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SD2439 Symbol Conditions 2SD2439Unit Unit0.20.2 5.515.6VCBO 160 ICBO VCB=1

Equivalent circuit CBDarlington 2SD2401(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2401 Symbol Conditions 2SD2401 UnitUnit0.26.00.336.4VCBO 160 ICBO VCB=160V

CEquivalent circuitBDarlington 2SD2438(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2438 Unit Symbol Conditions 2SD2438 Unit0.20.2 5.515.6VCBO 160 V ICBO VC

CEquivalent circuitBDarlington 2SD2494(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625)Application : Audio, Series Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol 2SD2494 Unit Symbol Conditions 2SD2494 Unit0.20.2 5.515.60.23.45VCBO

CEquivalent circuitBDarlington 2SD2495(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2495 Symbol Conditions 2SD2495 UnitUnit0.24.20.210.1c0.5VCBO 110 ICB

2SD2413TRANSISOR (NPN)FEATURES High collector to base voltage VCBO SOT-89 High collector to emitter voltage VCEO Large collector power dissipation PC 1. BASE Low collector to emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Marking:1S 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitsVCBO Collector-Base Volta

2SD2413SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR 1 SOT-892 4.6B4.43. EMITTER 1.63 1.81.41.42.6Features 4.252.43.75 High collector to base voltage VCBO 0.8MIN High collector to emitter voltage VCEO 0.530.400.480.442x)0.13 B0.35 Large collector power dissipation PC 0.371.53.0 Low collector to emitter saturation voltage VCE(

2SD2470 TO-92S Transistor (NPN)1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features Low saturation voltage VCE(sat):0.5V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 8 V IC Collector Current Continuous 5 A PC Collector Power Dissip

SMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SD2474FeaturesLow collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga

SMD Type TransistorsNPN Transistors2SD2459SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=150V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage V

SMD Type TransistorsNPN Transistors2SD24571.70 0.1 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Complementary to 2SB15990.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 40 V Emitt

SMD Type TransistorsNPN Transistors2SD24031.70 0.1 Features High current capacitance Low collector saturation voltage0.42 0.10.46 0.1 Complementary to 2SB15721.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SD2416SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=50VC0.42 0.10.46 0.1B1.Base2.CollectorE 3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volt

SMD Type TransistorsNPN Transistors2SD2423SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5AC Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.1BID1.Base2 k 0.5 2.Collector(Typ) (Typ)E 3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt

SMD Type TransistorsNPN Transistors2SD2413SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltag

SMD Type TransistorsNPN Transistors2SD2441SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=10V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SD2425SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60V Complementary to 2SB15780.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V

SMD Type TransistorsNPN Transistors2SD24021.70 0.1 Features High current capacitance Low collector saturation voltage0.42 0.10.46 0.1 Complementary to 2SB15711.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VE

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2490DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh DC current gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio ,re

isc Silicon NPN Power Transistor 2SD2499DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Darlington Power Transistor 2SD2422DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switch

isc Silicon NPN Darlington Power Transistor 2SD2493DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1624Minimum Lot-to-Lot variations for robust device performanceand reliable op

isc Silicon NPN Darlington Power Transistor 2SD2439DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1588Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2401DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1570Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD2454DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Darlington Power Transistor 2SD2449DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh DC Current Gain-: h = 3000( Min.) @(I = 8A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 3.0V(Max)@ (I = 8A, I = 8mA)CE(sat) C BComplement to Type 2SB1594Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD2400DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1569Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD2406DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 25W@ T = 25C CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Darlington Power Transistor 2SD2438DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 6A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 6A, I = 6mA)CE(sat) C BComplement to Type 2SB1587Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2494DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1625Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD2498DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TVHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Darlington Power Transistor 2SD2495DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1626Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

Inchange Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2488DESCRIPTIONWith TO-3PN packageDARLINGTONHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio ,regulator and general purposeAbsolute maximum ratings(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBO