2SD24Y - описание и поиск аналогов

2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit mm High breakdown voltage VCBO = 100 V V = 18 V EBO Low saturation voltage V = 1.2 V (max) (I = 5 A, I = 1 A) CE (sat) C B High speed t = 1 s (typ.) (I = 5 A, I = 0.5 A) f C B High DC current gain h = 200 (min) (V = 5 V, I = 0.5 A) FE CE C Maximum Ra

2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit mm High DC current gain hFE (1) = 800 to 3200 (V = 5 V, I = 0.1 A) CE C Low saturation voltage V = 0.3 V (typ.) (I = 0.5 A, I = 5 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter v

2SD2481 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD2481 Pulse Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Characteristics

2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2449 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 160 V (min) Complementary to 2SB1594 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V

2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit mm High power dissipation PC = 25 W (Tc = 25 C) Good hFE linearity Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 4 A

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit mm High DC current gain hFE (1) = 800 to 3200 (V = 5 V, I = 0.2 A) CE C Low saturation voltage V = 0.4 V (typ.) (I = 1 A, I = 10 mA) CE (sat) C B Complementary to 2SB1602 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage

2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.4 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATI

2SD2414(SM) TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Unit mm Power Amplifier Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) (at I = 4 A) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base vo

2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Cha

Ordering number EN4716 NPN Epitaxial Planar Silicon Transistor 2SD2426 80V/2A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2084B [2SD2426] 4.5 Features 1.9 2.6 10.5 1.2 1.4 Darlington connection. High DC current gain. 1.2 0.5 1.6 0.5 1 2 3 1 Emitter 2 Collector

DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current PACKAGE DRAWING (UNIT mm) capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES High current capacitance Low collector saturation voltage Co

DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING (UNIT mm) chip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors, relays, and solenoids. FE

DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current PACKAGE DRAWING (UNIT mm) capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES New package with dimensions in between those of small signal and powe

DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current PACKAGE DRAWING (UNIT mm) capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES High current capacitance Low collector saturation voltage Co

2SD2444K Transistors Power Transistor (15V, 1A) 2SD2444K Features External dimensions (Unit mm) 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) SMT3 at IC / IB = 0.4A / 20mA. 2) IC = 1A 2.9 1.1 0.4 0.8 3) Complements the 2SB1590K. (3) (2) (1) Packaging specification and hFE 0.95 0.95 0.15 1.9 Type 2SD2444K (1)Emitter SMT3 Package (2)Base Each lead has same

2SB1616 Transistors Transistors 2SD2478 (SPEC-B426) (94L-1129-D426) 301

2SB1590K Transistors Transistors 2SD2444K (96-150-B218) (96-247-D218) 293 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference o

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

Power Transistors 2SD2466, 2SD2466A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1604 Unit mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Rat

Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4

Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V 1.27 1.27 C

Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High collector to emitter voltage VCEO. Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.

Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High foward current transfer ratio hFE. 60V zener diode built in between collector and base. 45 Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1612 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.04 0.

Power Transistors 2SD2467 Silicon NPN epitaxial planar type For power switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink wi

Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High foward current transfer ratio hFE. 60V zener diode built in between collector and base. 45 Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0.15 3 2 1

Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V 1.27 1.27 C

Power Transistors 2SD2465, 2SD2465A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1603 Unit mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 3.2 0.1 High-speed switching Full-pack package superior in insulation, which can be installed to the heat sink with one screw Absolute Maximum Ratings (T

Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 45 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.4 0.08 Mini Power type package, allowing downsizing of th

Power Transistors 2SD2468 Silicon NPN epitaxial planar type For power switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink wi

Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 45 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.4 0.08 Mini Power type package, allowing downsizing of th

Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit mm For power amplification 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE 2 000 to 10 000 Dielectric breakdown voltage of the package > 5 kV 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings TC = 25 C 0.8 0.1 0.55 0.15 Parameter Symbol Rati

Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High collector to emitter voltage VCEO. Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.

Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0.15 3 2 1

Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4

Power Transistors 2SD2453 Silicon NPN triple diffusion planar type Unit mm 6.5 0.1 For high current transfer ratio and power amplification 2.3 0.1 5.3 0.1 4.35 0.1 0.5 0.1 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 1.0 0.1 0.1 0.05 0.5 0.1 0.75 0.1 Absolute Maximum Ratings Ta = 25 C 2.3 0.1 (5

Power Transistors 2SD2469, 2SD2469A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1607 Unit mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in-

Power Transistors 2SD2486 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High forward current transfer ratio hFE which has satisfactory linearity 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat si

UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS FEATURES * Low saturation voltage V= 0.25V(typ) at IC/IB= 3A/0.1A 1 * Collector current of 5A is possible TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD2470L-x-T9S-B 2SD2470G-x-T9S-B TO-92SP E C B Tape Box 2SD2

2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline UPAK 2, 4 1 2 3 1 ID 4 1. Base 2. Collector 2 k 0.5 3. Emitter (Typ) (Typ) 4. Collector (Flange) 3 2SD2423 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50

2SD2491, 2SD2492 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Features Isolated package TO-126FM Outline TO-126FM 1. Emitter 2. Collector 3. Base 1 2 3 2SD2491, 2SD2492 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD2491 2SD2492 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to b

100 Max 200 A) 100 Max 200 V 6500-20000 (P) (Y) . . . V V Max 120 TY P 10 0

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2493 DESCRIPTION With TO-3PN package Complement to type 2SB1624 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PA

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2439 DESCRIPTION With TO-3PML package Complement to type 2SB1588 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2401 DESCRIPTION With MT-200 package Complement to type 2SB1570 DARLINGTON APPLICATIONS Audio, Series Regulator and General Purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum r

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2438 DESCRIPTION With TO-3PML package Complement to type 2SB1587 APPLICATIONS Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25 ) SYMBOL PARAMETER CONDITION

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2494 DESCRIPTION With TO-3PML package Complement to type 2SB1625 APPLICATIONS Audio, Series regulator General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25 ) SYMBOL PARAMETER CONDITI

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION With TO-220F package Complement to type 2SB1626 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARA

Equivalent circuit C B Darlington 2SD2493 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) 2SD2493 Symbol 2SD2493 Symbol Conditions Unit Unit 0.2 4.8 0.4 15.6 100max A VCB

Equivalent circuit C B Darlington 2SD2439 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SD2439 Symbol Conditions 2SD2439 Unit Unit 0.2 0.2 5.5 15.6 VCBO 160 ICBO VCB=1

Equivalent circuit C B Darlington 2SD2401 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) Application Audio, Series Regulator and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2401 Symbol Conditions 2SD2401 Unit Unit 0.2 6.0 0.3 36.4 VCBO 160 ICBO VCB=160V

C Equivalent circuit B Darlington 2SD2438 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2438 Unit Symbol Conditions 2SD2438 Unit 0.2 0.2 5.5 15.6 VCBO 160 V ICBO VC

C Equivalent circuit B Darlington 2SD2494 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625) Application Audio, Series Regulator and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM100(TO3PF) Symbol 2SD2494 Unit Symbol Conditions 2SD2494 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO

C Equivalent circuit B Darlington 2SD2495 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2495 Symbol Conditions 2SD2495 Unit Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 110 ICB

2SD2413 TRANSISOR (NPN) FEATURES High collector to base voltage VCBO SOT-89 High collector to emitter voltage VCEO Large collector power dissipation PC 1. BASE Low collector to emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Marking 1S 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Volta

2SD2413 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 2.6 Features 4.25 2.4 3.75 High collector to base voltage VCBO 0.8 MIN High collector to emitter voltage VCEO 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Large collector power dissipation PC 0.37 1.5 3.0 Low collector to emitter saturation voltage VCE(

2SD2470 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features Low saturation voltage VCE(sat) 0.5V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 8 V IC Collector Current Continuous 5 A PC Collector Power Dissip

SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification 2SD2474 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga

SMD Type Transistors NPN Transistors 2SD2459 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=150V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage V

SMD Type Transistors NPN Transistors 2SD2457 1.70 0.1 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Complementary to 2SB1599 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 40 V Emitt

SMD Type Transistors NPN Transistors 2SD2403 1.70 0.1 Features High current capacitance Low collector saturation voltage 0.42 0.1 0.46 0.1 Complementary to 2SB1572 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VE

SMD Type Transistors NPN Transistors 2SD2416 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=50V C 0.42 0.1 0.46 0.1 B 1.Base 2.Collector E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volt

SMD Type Transistors NPN Transistors 2SD2423 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A C Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 B ID 1.Base 2 k 0.5 2.Collector (Typ) (Typ) E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt

SMD Type Transistors NPN Transistors 2SD2413 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltag

SMD Type Transistors NPN Transistors 2SD2441 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

SMD Type Transistors NPN Transistors 2SD2425 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60V Complementary to 2SB1578 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V

SMD Type Transistors NPN Transistors 2SD2402 1.70 0.1 Features High current capacitance Low collector saturation voltage 0.42 0.1 0.46 0.1 Complementary to 2SB1571 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VE

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2490 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High DC current gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio ,re

isc Silicon NPN Power Transistor 2SD2499 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc Silicon NPN Darlington Power Transistor 2SD2422 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switch

isc Silicon NPN Darlington Power Transistor 2SD2493 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1624 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2439 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 7A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1588 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2401 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 7A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1570 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Power Transistor 2SD2454 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

isc Silicon NPN Darlington Power Transistor 2SD2449 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO High DC Current Gain- h = 3000( Min.) @(I = 8A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 3.0V(Max)@ (I = 8A, I = 8mA) CE(sat) C B Complement to Type 2SB1594 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Power Transistor 2SD2400 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1569 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD2406 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 25W@ T = 25 C C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Darlington Power Transistor 2SD2438 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 6A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 6A, I = 6mA) CE(sat) C B Complement to Type 2SB1587 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2494 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1625 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2495 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1626 Minimum Lot-to-Lot variations for robust device performance and reliable op

Inchange Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2488 DESCRIPTION With TO-3PN package DARLINGTON High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio ,regulator and general purpose Absolute maximum ratings(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO