2SD250 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD250
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO3
Búsqueda de reemplazo de 2SD250
2SD250 Datasheet (PDF)
2sd2500.pdf

2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2500 HORIZONTAL DEFLECTION OUTPUT COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.35s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base
2sd2504.pdf

Transistors2SD2504Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm5.00.2 4.00.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.70.1 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.45+0.15 0.45+0.15Collector-base voltage (Emitter open) VCBO 15 V0.1 0.12.5+0
2sd2500.pdf

isc Silicon NPN Power Transistor 2SD2500DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Color TV horizontal deflection outputapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC2011 | 2SC2169



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