2SD250 Specs and Replacement
Type Designator: 2SD250
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
2SD250 Substitution
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2SD250 datasheet
2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2500 HORIZONTAL DEFLECTION OUTPUT COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.35 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base ... See More ⇒
Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.7 0.1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.45+0.15 0.45+0.15 Collector-base voltage (Emitter open) VCBO 15 V 0.1 0.1 2.5+0... See More ⇒
isc Silicon NPN Power Transistor 2SD2500 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co... See More ⇒
Detailed specifications: 2SD2494O, 2SD2494P, 2SD2494Y, 2SD2495O, 2SD2495P, 2SD2495Y, 2SD24Y, 2SD25, TIP142, 2SD251, 2SD254, 2SD255, 2SD2557, 2SD2558, 2SD256, 2SD2560O, 2SD2560P
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