2SD254 Todos los transistores

 ..1. Size:180K  inchange semiconductor
 2sd254.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD254 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR) CEO Collector Power Dissipation- P = 20W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU

 0.1. Size:51K  panasonic
 2sd2544.pdf

Power Transistors 2SD2544 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0

 0.2. Size:42K  panasonic
 2sd2549.pdf

Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification Unit mm Features High forward current transfer ratio hFE which has satisfactory 4.6 0.2 9.9 0.3 2.9 0.2 linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with 3.2 0.1 one screw 1.4 0.2 Absolute Maximum Rat

 0.3. Size:213K  inchange semiconductor
 2sd2549.pdf

isc Silicon NPN Power Transistor 2SD2549 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector Saturation Voltgae- V = 0.7V(Max.)@ I = 3A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2