All Transistors. 2SD254 Datasheet

 

2SD254 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD254
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO66

 2SD254 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD254 Datasheet (PDF)

 ..1. Size:180K  inchange semiconductor
2sd254.pdf

2SD254
2SD254

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD254DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR) CEOCollector Power Dissipation-: P = 20W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMU

 0.1. Size:51K  panasonic
2sd2544.pdf

2SD254
2SD254

Power Transistors2SD2544Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90Satisfactory linearity of foward current transfer ratio hFEAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0

 0.2. Size:42K  panasonic
2sd2549.pdf

2SD254
2SD254

Power Transistors2SD2549Silicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory4.6 0.29.9 0.32.9 0.2linearityLow collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink with 3.2 0.1one screw1.4 0.2Absolute Maximum Rat

 0.3. Size:213K  inchange semiconductor
2sd2549.pdf

2SD254
2SD254

isc Silicon NPN Power Transistor 2SD2549DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector Saturation Voltgae-: V = 0.7V(Max.)@ I = 3ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =2

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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