2SD261G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD261G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 160 MHz

Ganancia de corriente contínua (hFE): 200

Encapsulados: TO92

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2SD261G datasheet

 8.1. Size:53K  rohm
 2sd2614.pdf pdf_icon

2SD261G

2SD2614 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 5A) 2SD2614 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to 10.0 4.5 "L" loads. 3.2 2.8 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 1.2 1.3 0.8 0.75 ( ) 2.54 2.54 2.6 (1)

 8.2. Size:47K  rohm
 2sd2611.pdf pdf_icon

2SD261G

2SD2611 Transistors Power Transistor (80V, 7A) 2SD2611 Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25 C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672. Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collecto

 8.3. Size:46K  rohm
 2sd2618.pdf pdf_icon

2SD261G

2SD2618 Transistors Power Transistor (80V, 4A) 2SD2618 Features Circuit diagram 1) Darlington connection for a high hFE. C 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. B R 300 R B Base C Collector E E Emitter Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V C

 8.4. Size:47K  rohm
 2sd2615.pdf pdf_icon

2SD261G

2SD2615 Transistors Power Transistor (120V, 6A) 2SD2615 Features Circuit diagram 1) Darlington connection for high DC current gain. C 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. B R1 R2 E R1 5.0k B Base C Collector R2 300 E Emitter Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector

MOSTRAR MÁS

Otros transistores... 2SD258, 2SD2589O, 2SD2589P, 2SD2589Y, 2SD259, 2SD26, 2SD260, 2SD261, C1815, 2SD261O, 2SD261R, 2SD261Y, 2SD262, 2SD265, 2SD266, 2SD26A, 2SD26B