2SD266 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD266

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO3

 Búsqueda de reemplazo de 2SD266

- Selecciónⓘ de transistores por parámetros

 

2SD266 datasheet

 0.1. Size:35K  sanyo
 2sd2663.pdf pdf_icon

2SD266

Ordering number ENN7380 2SB1700 / 2SD2663 PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1700 / 2SD2663 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2042B [2SB1700 / 2SD2663] 8.0 Features 4.0 3.3 1.0 1.0 High DC current gain. Large current capacity and wide

 0.2. Size:101K  rohm
 2sd2662.pdf pdf_icon

2SD266

2SD2662 Transistors Low frequency amplifier 2SD2662 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA (1)Base ROHM MPT3 JEITA SC-62 (2)Collector JEDEC SOT-89 (3)Emitter Abbreviated symbol FZ Packaging specifications Absolute maximum ratings (Ta=25

 0.3. Size:64K  rohm
 2sd2661.pdf pdf_icon

2SD266

2SD2661 Transistors Low frequency amplifier transistor(12V, 2A) 2SD2661 External dimensions (Unit mm) Features Low VCE(sat) 180mV 4.0 (IC / IB = 1A / 50mA) 1.0 2.5 0.5 (1) (2) (3) (1)Base ROHM MPT3 JEITA SC-62 (2)Collector JEDEC SOT-89 (3)Emitter Abbreviated symbol FW Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Li

MOSTRAR MÁS

Otros transistores... 2SD260, 2SD261, 2SD261G, 2SD261O, 2SD261R, 2SD261Y, 2SD262, 2SD265, BC337, 2SD26A, 2SD26B, 2SD26C, 2SD27, 2SD271, 2SD272, 2SD273, 2SD274