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2SD266 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD266
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO3
 

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2SD266 Datasheet (PDF)

 0.1. Size:35K  sanyo
 2sd2663.pdf pdf_icon

2SD266

Ordering number : ENN73802SB1700 / 2SD2663PNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1700 / 2SD2663Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit : mmvoltage regulator control. 2042B[2SB1700 / 2SD2663]8.0Features4.03.31.0 1.0 High DC current gain. Large current capacity and wide

 0.2. Size:101K  rohm
 2sd2662.pdf pdf_icon

2SD266

2SD2662 Transistors Low frequency amplifier 2SD2662 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA (1)BaseROHM : MPT3JEITA : SC-62 (2)CollectorJEDEC: SOT-89(3)EmitterAbbreviated symbol : FZ Packaging specifications Absolute maximum ratings (Ta=25

 0.3. Size:64K  rohm
 2sd2661.pdf pdf_icon

2SD266

2SD2661 Transistors Low frequency amplifier transistor(12V, 2A) 2SD2661 External dimensions (Unit : mm) Features Low VCE(sat) 180mV 4.0(IC / IB = 1A / 50mA) 1.0 2.5 0.5(1)(2)(3)(1)BaseROHM : MPT3JEITA : SC-62 (2)CollectorJEDEC: SOT-89 (3)Emitter Abbreviated symbol : FW Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Li

MOSTRAR MÁS

Otros transistores... 2SD260 , 2SD261 , 2SD261G , 2SD261O , 2SD261R , 2SD261Y , 2SD262 , 2SD265 , D882 , 2SD26A , 2SD26B , 2SD26C , 2SD27 , 2SD271 , 2SD272 , 2SD273 , 2SD274 .

History: C1002

 

 
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