All Transistors. 2SD266 Datasheet

 

2SD266 Datasheet and Replacement


   Type Designator: 2SD266
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
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2SD266 Datasheet (PDF)

 0.1. Size:35K  sanyo
2sd2663.pdf pdf_icon

2SD266

Ordering number : ENN73802SB1700 / 2SD2663PNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1700 / 2SD2663Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit : mmvoltage regulator control. 2042B[2SB1700 / 2SD2663]8.0Features4.03.31.0 1.0 High DC current gain. Large current capacity and wide

 0.2. Size:101K  rohm
2sd2662.pdf pdf_icon

2SD266

2SD2662 Transistors Low frequency amplifier 2SD2662 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA (1)BaseROHM : MPT3JEITA : SC-62 (2)CollectorJEDEC: SOT-89(3)EmitterAbbreviated symbol : FZ Packaging specifications Absolute maximum ratings (Ta=25

 0.3. Size:64K  rohm
2sd2661.pdf pdf_icon

2SD266

2SD2661 Transistors Low frequency amplifier transistor(12V, 2A) 2SD2661 External dimensions (Unit : mm) Features Low VCE(sat) 180mV 4.0(IC / IB = 1A / 50mA) 1.0 2.5 0.5(1)(2)(3)(1)BaseROHM : MPT3JEITA : SC-62 (2)CollectorJEDEC: SOT-89 (3)Emitter Abbreviated symbol : FW Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Li

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2STR1160 | 2SB1188SQ-R | PZT158 | 3DF5 | 2N620 | DTA144WET1G | IT132

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