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2SD280 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD280
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 350
   Paquete / Cubierta: TO3
 

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2SD280 Datasheet (PDF)

 9.1. Size:33K  wingshing
 2sd288.pdf pdf_icon

2SD280

2SD288 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER* TO-220ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 8 0 V Collector-Emitter Voltage VCEO 55 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25oC) PC 20 Wo Junction Temperature Tj 150 Co C Storage Temperat

 9.2. Size:189K  inchange semiconductor
 2sd289.pdf pdf_icon

2SD280

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD289DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOCollector Power Dissipation-: P = 25W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power regulator, low frequency high poweramplifier applications.ABSOLU

 9.3. Size:216K  inchange semiconductor
 2sd288.pdf pdf_icon

2SD280

isc Silicon NPN Power Transistor 2SD288DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOCollector Power Dissipation-: P = 25W(Max)@ T = 25C CAPPLICATIONSDesigned for power regulator, low frequency high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 VCBOV Collector-E

Otros transistores... 2SD26B , 2SD26C , 2SD27 , 2SD271 , 2SD272 , 2SD273 , 2SD274 , 2SD28 , TIP42C , 2SD283 , 2SD284 , 2SD285 , 2SD286 , 2SD287 , 2SD287A , 2SD287B , 2SD287C .

 

 
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