2SD280 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD280
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 350
Noise Figure, dB: -
Package: TO3
2SD280 Transistor Equivalent Substitute - Cross-Reference Search
2SD280 Datasheet (PDF)
2sd288.pdf
2SD288 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER* TO-220ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 8 0 V Collector-Emitter Voltage VCEO 55 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25oC) PC 20 Wo Junction Temperature Tj 150 Co C Storage Temperat
2sd289.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD289DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOCollector Power Dissipation-: P = 25W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power regulator, low frequency high poweramplifier applications.ABSOLU
2sd288.pdf
isc Silicon NPN Power Transistor 2SD288DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOCollector Power Dissipation-: P = 25W(Max)@ T = 25C CAPPLICATIONSDesigned for power regulator, low frequency high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 VCBOV Collector-E
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
