2SD280 PDF and Equivalents Search

 9.1. Size:33K  wingshing

 2sd288.pdf

2SD288 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * TO-220 ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 8 0 V Collector-Emitter Voltage VCEO 55 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25oC) PC 20 W o Junction Temperature Tj 150 C o C Storage Temperat... See More ⇒

 9.2. Size:189K  inchange semiconductor

 2sd289.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD289 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Collector Power Dissipation- P = 25W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power regulator, low frequency high power amplifier applications. ABSOLU... See More ⇒

 9.3. Size:216K  inchange semiconductor

 2sd288.pdf

isc Silicon NPN Power Transistor 2SD288 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Collector Power Dissipation- P = 25W(Max)@ T = 25 C C APPLICATIONS Designed for power regulator, low frequency high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-E... See More ⇒