2SD287A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD287A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO3
Búsqueda de reemplazo de 2SD287A
2SD287A Datasheet (PDF)
2sd288.pdf

2SD288 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER* TO-220ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 8 0 V Collector-Emitter Voltage VCEO 55 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25oC) PC 20 Wo Junction Temperature Tj 150 Co C Storage Temperat
2sd289.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD289DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOCollector Power Dissipation-: P = 25W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power regulator, low frequency high poweramplifier applications.ABSOLU
2sd288.pdf

isc Silicon NPN Power Transistor 2SD288DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOCollector Power Dissipation-: P = 25W(Max)@ T = 25C CAPPLICATIONSDesigned for power regulator, low frequency high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 VCBOV Collector-E
Otros transistores... 2SD274 , 2SD28 , 2SD280 , 2SD283 , 2SD284 , 2SD285 , 2SD286 , 2SD287 , 2SC2073 , 2SD287B , 2SD287C , 2SD288 , 2SD288O , 2SD288R , 2SD288Y , 2SD289 , 2SD29 .
History: 2SC5514 | 2SD1906R | BCV63 | CFD1264Q | 2SC2335R | FE2915
History: 2SC5514 | 2SD1906R | BCV63 | CFD1264Q | 2SC2335R | FE2915



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