2SD338-1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD338-1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 80 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO3

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2SD338-1 datasheet

 8.1. Size:196K  inchange semiconductor
 2sd338.pdf pdf_icon

2SD338-1

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD338 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose

 9.1. Size:33K  sanyo
 2sd330.pdf pdf_icon

2SD338-1

Ordering number 397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions Especially suited for use in output stage of 10W AF unit mm Power amplifier. 2010C Complementary pair with the 2SB514 and 2SD313. [2SB514/2SD330] JEDEC TO-220AB 1 Base ( ) 2SB514 EIAJ SC-46 2 Collector

 9.2. Size:189K  inchange semiconductor
 2sd331.pdf pdf_icon

2SD338-1

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD331 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB515 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in output sta

 9.3. Size:197K  inchange semiconductor
 2sd339.pdf pdf_icon

2SD338-1

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD339 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 7.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpos

MOSTRAR MÁS

Otros transistores... 2SD331E, 2SD331F, 2SD332, 2SD334, 2SD334A, 2SD335, 2SD336, 2SD338, 2N3055, 2SD338-2, 2SD339, 2SD339-1, 2SD339-2, 2SD34, 2SD340, 2SD340-1, 2SD340-2