All Transistors. 2SD338-1 Datasheet

 

2SD338-1 Datasheet and Replacement


   Type Designator: 2SD338-1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3
 

 2SD338-1 Substitution

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2SD338-1 Datasheet (PDF)

 8.1. Size:196K  inchange semiconductor
2sd338.pdf pdf_icon

2SD338-1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD338DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 2.0V(Max)@ I = 5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose

 9.1. Size:33K  sanyo
2sd330.pdf pdf_icon

2SD338-1

Ordering number:397EPNP/NPN Triple Diffused Planar Silicon Transistors2SB514/2SD33050V/2A Low-Frequency Power AmplifierApplicationsFeatures Package Dimensions Especially suited for use in output stage of 10W AFunit:mmPower amplifier.2010C Complementary pair with the 2SB514 and 2SD313.[2SB514/2SD330]JEDEC : TO-220AB 1 : Base( ) : 2SB514EIAJ : SC-46 2 : Collector

 9.2. Size:189K  inchange semiconductor
2sd331.pdf pdf_icon

2SD338-1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD331DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB515Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for use in output sta

 9.3. Size:197K  inchange semiconductor
2sd339.pdf pdf_icon

2SD338-1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 7.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpos

Datasheet: 2SD331E , 2SD331F , 2SD332 , 2SD334 , 2SD334A , 2SD335 , 2SD336 , 2SD338 , C5198 , 2SD338-2 , 2SD339 , 2SD339-1 , 2SD339-2 , 2SD34 , 2SD340 , 2SD340-1 , 2SD340-2 .

History: 2SB0950 | 2SD247 | DTC043XEB | DTC115EY3 | KT351B | 2SC3279-M | KT368A9

Keywords - 2SD338-1 transistor datasheet

 2SD338-1 cross reference
 2SD338-1 equivalent finder
 2SD338-1 lookup
 2SD338-1 substitution
 2SD338-1 replacement

 

 
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