2SD340-1 Todos los transistores

 

2SD340-1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD340-1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 120 W
   Tensión colector-base (Vcb): 130 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO3
 

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2SD340-1 Datasheet (PDF)

 9.1. Size:188K  inchange semiconductor
 2sd343.pdf pdf_icon

2SD340-1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD343DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 2.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli

 9.2. Size:180K  inchange semiconductor
 2sd348.pdf pdf_icon

2SD340-1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD348DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers and switching appl

 9.3. Size:199K  inchange semiconductor
 2sd347.pdf pdf_icon

2SD340-1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 3.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier a

 9.4. Size:188K  inchange semiconductor
 2sd345.pdf pdf_icon

2SD340-1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD345DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 2.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli

MOSTRAR MÁS

Otros transistores... 2SD338 , 2SD338-1 , 2SD338-2 , 2SD339 , 2SD339-1 , 2SD339-2 , 2SD34 , 2SD340 , 2SA1943 , 2SD340-2 , 2SD341 , 2SD341H , 2SD342 , 2SD343 , 2SD344 , 2SD345 , 2SD346 .

 

 
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