2SD341 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD341

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 70 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 180 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.8 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO3

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2SD341 datasheet

 9.1. Size:188K  inchange semiconductor
 2sd343.pdf pdf_icon

2SD341

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

 9.2. Size:180K  inchange semiconductor
 2sd348.pdf pdf_icon

2SD341

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD348 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and switching appl

 9.3. Size:199K  inchange semiconductor
 2sd347.pdf pdf_icon

2SD341

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a

 9.4. Size:188K  inchange semiconductor
 2sd345.pdf pdf_icon

2SD341

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD345 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

MOSTRAR MÁS

Otros transistores... 2SD338-2, 2SD339, 2SD339-1, 2SD339-2, 2SD34, 2SD340, 2SD340-1, 2SD340-2, 13007, 2SD341H, 2SD342, 2SD343, 2SD344, 2SD345, 2SD346, 2SD347, 2SD348