2SD341 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SD341 Specs and Replacement

Type Designator: 2SD341

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 180 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

2SD341 Substitution

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2SD341 datasheet

9.1. Size:188K inchange semiconductor

2sd343.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli... See More ⇒

9.2. Size:180K inchange semiconductor

2sd348.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD348 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and switching appl... See More ⇒

9.3. Size:199K inchange semiconductor

2sd347.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a... See More ⇒

9.4. Size:188K inchange semiconductor

2sd345.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD345 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli... See More ⇒

Detailed specifications: 2SD338-2 , 2SD339 , 2SD339-1 , 2SD339-2 , 2SD34 , 2SD340 , 2SD340-1 , 2SD340-2 , 13007 , 2SD341H , 2SD342 , 2SD343 , 2SD344 , 2SD345 , 2SD346 , 2SD347 , 2SD348 .