2SD349 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD349  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 30 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO236

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2SD349 datasheet

 9.1. Size:188K  inchange semiconductor
 2sd343.pdf pdf_icon

2SD349

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

 9.2. Size:180K  inchange semiconductor
 2sd348.pdf pdf_icon

2SD349

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD348 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and switching appl

 9.3. Size:199K  inchange semiconductor
 2sd347.pdf pdf_icon

2SD349

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a

 9.4. Size:188K  inchange semiconductor
 2sd345.pdf pdf_icon

2SD349

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD345 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

MOSTRAR MÁS

Otros transistores... 2SD341H, 2SD342, 2SD343, 2SD344, 2SD345, 2SD346, 2SD347, 2SD348, TIP31C, 2SD35, 2SD350, 2SD350A, 2SD351, 2SD352, 2SD353, 2SD355, 2SD356