2SD362 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD362 Datasheet (PDF)

..1. Size:211K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR)CEOCollector Power Dissipation-: P = 40W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

9.1. Size:32K no
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9.2. Size:212K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD363DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector Power Dissipation-: P = 40W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

9.3. Size:210K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD365DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB512Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier appl

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .