2SD362 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD362
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO66
2SD362 Transistor Equivalent Substitute - Cross-Reference Search
2SD362 Datasheet (PDF)
2sd362.pdf
isc Silicon NPN Power Transistor 2SD362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR)CEOCollector Power Dissipation-: P = 40W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
2sd363.pdf
isc Silicon NPN Power Transistor 2SD363DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector Power Dissipation-: P = 40W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2sd365.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD365DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB512Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier appl
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
