2SD363Y Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD363Y 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 120
Encapsulados: TO220
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2SD363Y datasheet
2sd363.pdf
isc Silicon NPN Power Transistor 2SD363 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector Power Dissipation- P = 40W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
2sd365.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD365 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB512 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appl
2sd362.pdf
isc Silicon NPN Power Transistor 2SD362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR)CEO Collector Power Dissipation- P = 40W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
Otros transistores... 2SD362, 2SD362N, 2SD362O, 2SD362R, 2SD363, 2SD363A, 2SD363O, 2SD363R, TIP127, 2SD364, 2SD365, 2SD365A, 2SD366, 2SD366A, 2SD367, 2SD368, 2SD369
Parámetros del transistor bipolar y su interrelación.
History: NB111HJ | NTE2543 | 2SC1376 | NB112EI | KRC841U | 2SC4102FRA | CS6208
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