2SD370 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD370
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 110 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2SD370
2SD370 Datasheet (PDF)
2sd371.pdf
isc Silicon NPN Power Transistors 2SD371DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Power Dissipation-: P = 50W(Max)@T =25C CComplement to Type 2SB531Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sd375.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD375DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in clocked voltage converters andswitching applications.ABSOLUTE MAXIMU
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
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