2SD370 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD370
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
2SD370 Transistor Equivalent Substitute - Cross-Reference Search
2SD370 Datasheet (PDF)
2sd371.pdf
isc Silicon NPN Power Transistors 2SD371DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Power Dissipation-: P = 50W(Max)@T =25C CComplement to Type 2SB531Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sd375.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD375DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in clocked voltage converters andswitching applications.ABSOLUTE MAXIMU
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
