2SD370 Datasheet and Replacement
Type Designator: 2SD370
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
2SD370 Substitution
2SD370 Datasheet (PDF)
2sd371.pdf

isc Silicon NPN Power Transistors 2SD371DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Power Dissipation-: P = 50W(Max)@T =25C CComplement to Type 2SB531Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sd375.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD375DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in clocked voltage converters andswitching applications.ABSOLUTE MAXIMU
Datasheet: 2SD365 , 2SD365A , 2SD366 , 2SD366A , 2SD367 , 2SD368 , 2SD369 , 2SD37 , 2SD313 , 2SD371 , 2SD372 , 2SD373 , 2SD373A , 2SD374 , 2SD375 , 2SD376 , 2SD376A .
History: 2N5338LCC4
Keywords - 2SD370 transistor datasheet
2SD370 cross reference
2SD370 equivalent finder
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History: 2N5338LCC4



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