2SD370 Datasheet. Specs and Replacement

Type Designator: 2SD370  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3

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2SD370 datasheet

 9.1. Size:42K  no

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2SD370

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 9.2. Size:209K  inchange semiconductor

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2SD370

isc Silicon NPN Power Transistors 2SD371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation- P = 50W(Max)@T =25 C C Complement to Type 2SB531 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

 9.3. Size:185K  inchange semiconductor

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2SD370

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD375 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in clocked voltage converters and switching applications. ABSOLUTE MAXIMU... See More ⇒

Detailed specifications: 2SD365, 2SD365A, 2SD366, 2SD366A, 2SD367, 2SD368, 2SD369, 2SD37, A1013, 2SD371, 2SD372, 2SD373, 2SD373A, 2SD374, 2SD375, 2SD376, 2SD376A

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