2SD405 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD405
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 4000
Encapsulados: TO39-1
Búsqueda de reemplazo de 2SD405
- Selecciónⓘ de transistores por parámetros
2SD405 datasheet
9.4. Size:55K jmnic
2sd401a.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base
9.5. Size:117K jmnic
2sd401.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter
9.6. Size:220K lge
2sd400 to-92mod.pdf 

2SD400 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Low-Frequency power Amp, Electronic Governor Applications 8.400 8.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.900 1.100 Symbol Parameter Value Units 0.400 0.600 VCBO Collector-Base Voltage 25 V 13.800 VCEO Collector-Emitter Voltage 25 V 14.200 VE
9.7. Size:223K lge
2sd400 to-92l.pdf 

2SD400 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 Low-Frequency power Amp, Electronic Governor Applications 8.200 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 VCBO Collector-Base Voltage 25 V 13.800 14.200 VCEO Collector-Emitter Voltage 25 V VEBO Emi
9.9. Size:187K inchange semiconductor
2sd402.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD402 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SB547 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical defl
9.10. Size:125K inchange semiconductor
2sd401a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mount
9.11. Size:149K inchange semiconductor
2sd401.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3
Otros transistores... 2SD401G
, 2SD401O
, 2SD401R
, 2SD401Y
, 2SD402
, 2SD402A
, 2SD404
, 2SD404G
, 2N5401
, 2SD406
, 2SD407
, 2SD408
, 2SD409
, 2SD41
, 2SD410
, 2SD411
, 2SD412
.
History: SD1462
| 2SB1607