2SD405. Аналоги и основные параметры
Наименование производителя: 2SD405
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 70 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 4000
Корпус транзистора: TO39-1
Аналоги (замена) для 2SD405
- подборⓘ биполярного транзистора по параметрам
2SD405 даташит
9.4. Size:55K jmnic
2sd401a.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base
9.5. Size:117K jmnic
2sd401.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter
9.6. Size:220K lge
2sd400 to-92mod.pdf 
2SD400 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Low-Frequency power Amp, Electronic Governor Applications 8.400 8.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.900 1.100 Symbol Parameter Value Units 0.400 0.600 VCBO Collector-Base Voltage 25 V 13.800 VCEO Collector-Emitter Voltage 25 V 14.200 VE
9.7. Size:223K lge
2sd400 to-92l.pdf 
2SD400 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 Low-Frequency power Amp, Electronic Governor Applications 8.200 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 VCBO Collector-Base Voltage 25 V 13.800 14.200 VCEO Collector-Emitter Voltage 25 V VEBO Emi
9.9. Size:187K inchange semiconductor
2sd402.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD402 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SB547 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical defl
9.10. Size:125K inchange semiconductor
2sd401a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mount
9.11. Size:149K inchange semiconductor
2sd401.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3
Другие транзисторы: 2SD401G, 2SD401O, 2SD401R, 2SD401Y, 2SD402, 2SD402A, 2SD404, 2SD404G, 2N5401, 2SD406, 2SD407, 2SD408, 2SD409, 2SD41, 2SD410, 2SD411, 2SD412
