2SD409
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
   Número de Parte: 2SD409
   Material: Si
   Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
   Disipación total del dispositivo (Pc): 30
 W
   Tensión colector-base (Vcb): 100
 V
   Tensión colector-emisor (Vce): 100
 V
   Tensión emisor-base (Veb): 7
 V
   Corriente del colector DC máxima (Ic): 5
 A
   Temperatura operativa máxima (Tj): 175
 °C
CARACTERÍSTICAS ELÉCTRICAS
   Ganancia de corriente contínua (hfe): 3000
		   Paquete / Cubierta: 
TO66
				
				  
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2SD409
 Datasheet (PDF)
 9.4.  Size:55K  jmnic
 2sd401a.pdf 
						 
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 
 9.5.  Size:117K  jmnic
 2sd401.pdf 
						 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter
 9.6.  Size:220K  lge
 2sd400 to-92mod.pdf 
						 
 2SD400 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1  22. COLLECTOR  3 3. BASE Features5.8006.200 Low-Frequency power Amp, Electronic Governor Applications  8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units0.4000.600VCBO Collector-Base Voltage 25 V 13.800VCEO Collector-Emitter Voltage 25 V 14.200VE
 9.7.  Size:223K  lge
 2sd400 to-92l.pdf 
						 
 2SD400 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low-Frequency power Amp, Electronic Governor Applications 8.2000.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage 25 V 13.80014.200VCEO Collector-Emitter Voltage 25 V VEBO Emi
 9.8.  Size:452K  blue-rocket-elect
 2sd400.pdf 
						 
2SD400(BR3DG400L) Rev.C Feb.-2015 DATA SHEET  / Descriptions TO-92LM  NPN Silicon NPN transistor in a TO-92LM Plastic Package.  / Features  High Voltage ,low. Current.  / Applications  Low frequency power amplifier, electronic governor applications. 
 9.9.  Size:187K  inchange semiconductor
 2sd402.pdf 
						 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD402DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SB547Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical defl
 9.10.  Size:125K  inchange semiconductor
 2sd401a.pdf 
						 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mount
 9.11.  Size:149K  inchange semiconductor
 2sd401.pdf 
						 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 
Otros transistores... 2SD402
, 2SD402A
, 2SD404
, 2SD404G
, 2SD405
, 2SD406
, 2SD407
, 2SD408
, A1015
, 2SD41
, 2SD410
, 2SD411
, 2SD412
, 2SD413
, 2SD414
, 2SD415
, 2SD416
. 
 
 
