2SD409
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD409
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 3000
Paquete / Cubierta:
TO66
Búsqueda de reemplazo de transistor bipolar 2SD409
2SD409
Datasheet (PDF)
9.4. Size:55K jmnic
2sd401a.pdf 
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
9.5. Size:117K jmnic
2sd401.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter
9.6. Size:220K lge
2sd400 to-92mod.pdf
2SD400 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Low-Frequency power Amp, Electronic Governor Applications 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units0.4000.600VCBO Collector-Base Voltage 25 V 13.800VCEO Collector-Emitter Voltage 25 V 14.200VE
9.7. Size:223K lge
2sd400 to-92l.pdf
2SD400 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low-Frequency power Amp, Electronic Governor Applications 8.2000.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage 25 V 13.80014.200VCEO Collector-Emitter Voltage 25 V VEBO Emi
9.8. Size:452K blue-rocket-elect
2sd400.pdf
2SD400(BR3DG400L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High Voltage ,low. Current. / Applications Low frequency power amplifier, electronic governor applications.
9.9. Size:187K inchange semiconductor
2sd402.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD402DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SB547Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical defl
9.10. Size:125K inchange semiconductor
2sd401a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mount
9.11. Size:149K inchange semiconductor
2sd401.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3
Otros transistores... 2SA1803O
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, 2SA1815-3
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.
