2SD422 Todos los transistores

 

2SD422 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD422
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO66
 

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2SD422 Datasheet (PDF)

 9.1. Size:204K  inchange semiconductor
 2sd427.pdf pdf_icon

2SD422

isc Silicon NPN Power Transistors 2SD427DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SB557Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 50W high-fidelity audio f

 9.2. Size:208K  inchange semiconductor
 2sd425.pdf pdf_icon

2SD422

isc Silicon NPN Power Transistors 2SD425DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB555Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for high-fidelity audio freq

 9.3. Size:116K  inchange semiconductor
 2sd425 2sd426.pdf pdf_icon

2SD422

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi

 9.4. Size:208K  inchange semiconductor
 2sd426.pdf pdf_icon

2SD422

isc Silicon NPN Power Transistors 2SD426DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB556Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for high-fidelity audio freq

MOSTRAR MÁS

Otros transistores... 2SD414 , 2SD415 , 2SD416 , 2SD417 , 2SD418 , 2SD419 , 2SD420 , 2SD421 , BC557 , 2SD423 , 2SD424 , 2SD425 , 2SD426 , 2SD427 , 2SD427S , 2SD428 , 2SD429 .

 

 
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