2SD429 Todos los transistores

 9.1. Size:204K  inchange semiconductor
 2sd427.pdf

isc Silicon NPN Power Transistors 2SD427 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SB557 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 50W high-fidelity audio f

 9.2. Size:208K  inchange semiconductor
 2sd425.pdf

isc Silicon NPN Power Transistors 2SD425 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB555 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for high-fidelity audio freq

 9.3. Size:116K  inchange semiconductor
 2sd425 2sd426.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi

 9.4. Size:208K  inchange semiconductor
 2sd426.pdf

isc Silicon NPN Power Transistors 2SD426 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB556 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for high-fidelity audio freq

 9.5. Size:207K  inchange semiconductor
 2sd424.pdf

isc Silicon NPN Power Transistor 2SD424 DESCRIPTION High Power Dissipation- P = 150W@T = 25 C C High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Complement to Type 2SB554 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier ,DC-DC converter and regulator applications. ABSOLUTE M

 9.6. Size:208K  inchange semiconductor
 2sd428.pdf

isc Silicon NPN Power Transistors 2SD428 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SB558 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 40W high-fidelity audio f