Биполярный транзистор 2SD429 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD429
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO3
2SD429 Datasheet (PDF)
2sd427.pdf
isc Silicon NPN Power Transistors 2SD427DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SB557Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 50W high-fidelity audio f
2sd425.pdf
isc Silicon NPN Power Transistors 2SD425DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB555Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for high-fidelity audio freq
2sd425 2sd426.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi
2sd426.pdf
isc Silicon NPN Power Transistors 2SD426DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB556Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for high-fidelity audio freq
2sd424.pdf
isc Silicon NPN Power Transistor 2SD424DESCRIPTIONHigh Power Dissipation-: P = 150W@T = 25C CHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SB554Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier ,DC-DC converter and regulatorapplications.ABSOLUTE M
2sd428.pdf
isc Silicon NPN Power Transistors 2SD428DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SB558Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 40W high-fidelity audio f
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050