2SD457 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD457

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 55 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3A

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2SD457 datasheet

 9.1. Size:179K  inchange semiconductor
 2sd45.pdf pdf_icon

2SD457

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD45 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =

 9.2. Size:190K  inchange semiconductor
 2sd459.pdf pdf_icon

2SD457

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching

 9.3. Size:207K  inchange semiconductor
 2sd458.pdf pdf_icon

2SD457

isc Silicon NPN Power Transistors 2SD458 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

Otros transistores... 2SD437W, 2SD438, 2SD438MP, 2SD439, 2SD43A, 2SD44, 2SD445, 2SD45, 2SD2499, 2SD458, 2SD459, 2SD46, 2SD460, 2SD461, 2SD463, 2SD464, 2SD465