2SD457 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD457
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 55 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3A
2SD457 Transistor Equivalent Substitute - Cross-Reference Search
2SD457 Datasheet (PDF)
2sd45.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD45DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =
2sd459.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD459DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switching
2sd458.pdf
isc Silicon NPN Power Transistors 2SD458DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: DDTD122TU
