2SD457 Specs and Replacement
Type Designator: 2SD457
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 55 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3A
2SD457 Substitution
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2SD457 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD45 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching ... See More ⇒
isc Silicon NPN Power Transistors 2SD458 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒
Detailed specifications: 2SD437W, 2SD438, 2SD438MP, 2SD439, 2SD43A, 2SD44, 2SD445, 2SD45, 2SD2499, 2SD458, 2SD459, 2SD46, 2SD460, 2SD461, 2SD463, 2SD464, 2SD465
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