2SD47
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD47
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SD47
2SD47
Datasheet (PDF)
0.3. Size:32K hitachi
2sd476.pdf 
2SD476(K), 2SD476A(K)Silicon NPN Triple DiffusedApplicationPower switching complementary pair with 2SB566(K) and 2SB566A(K)OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD476(K) 2SD476A(K) UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage VCEO 50 60 VEmitter to base voltage
0.5. Size:208K inchange semiconductor
2sd476n.pdf
isc Silicon NPN Power Transistors 2SD476NDESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I =2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
0.6. Size:150K inchange semiconductor
2sd476 2sd476a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A DESCRIPTION With TO-220C package Complement to type 2SB566/566A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMET
0.7. Size:184K inchange semiconductor
2sd473.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD473DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and
0.8. Size:212K inchange semiconductor
2sd478.pdf
isc Silicon NPN Power Transistor 2SD478DESCRIPTIONCollector Power Dissipation: P = 30WCCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
0.9. Size:186K inchange semiconductor
2sd470.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD470DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
