2SD47 Specs and Replacement
Type Designator: 2SD47
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 125
°C
Electrical Characteristics
Transition Frequency (ft): 10
MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO3
-
BJT ⓘ Cross-Reference Search
2SD47 datasheet
0.3. Size:32K hitachi
2sd476.pdf 

2SD476(K), 2SD476A(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB566(K) and 2SB566A(K) Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD476(K) 2SD476A(K) Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage... See More ⇒
0.5. Size:208K inchange semiconductor
2sd476n.pdf 

isc Silicon NPN Power Transistors 2SD476N DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I =2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒
0.6. Size:150K inchange semiconductor
2sd476 2sd476a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A DESCRIPTION With TO-220C package Complement to type 2SB566/566A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMET... See More ⇒
0.7. Size:184K inchange semiconductor
2sd473.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD473 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and... See More ⇒
0.8. Size:212K inchange semiconductor
2sd478.pdf 

isc Silicon NPN Power Transistor 2SD478 DESCRIPTION Collector Power Dissipation P = 30W C Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co... See More ⇒
0.9. Size:186K inchange semiconductor
2sd470.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD470 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM... See More ⇒
Detailed specifications: 2SD461
, 2SD463
, 2SD464
, 2SD465
, 2SD466
, 2SD467
, 2SD468
, 2SD469
, 13005
, 2SD470
, 2SD470B
, 2SD471
, 2SD471AG
, 2SD471AO
, 2SD471AY
, 2SD472
, 2SD472H
.
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