2SD476A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD476A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 70
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SD476A
2SD476A
Datasheet (PDF)
..1. Size:150K inchange semiconductor
2sd476 2sd476a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A DESCRIPTION With TO-220C package Complement to type 2SB566/566A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMET
8.1. Size:32K hitachi
2sd476.pdf
2SD476(K), 2SD476A(K)Silicon NPN Triple DiffusedApplicationPower switching complementary pair with 2SB566(K) and 2SB566A(K)OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD476(K) 2SD476A(K) UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage VCEO 50 60 VEmitter to base voltage
8.2. Size:208K inchange semiconductor
2sd476n.pdf
isc Silicon NPN Power Transistors 2SD476NDESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I =2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
9.4. Size:184K inchange semiconductor
2sd473.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD473DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and
9.5. Size:212K inchange semiconductor
2sd478.pdf
isc Silicon NPN Power Transistor 2SD478DESCRIPTIONCollector Power Dissipation: P = 30WCCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
9.6. Size:186K inchange semiconductor
2sd470.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD470DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM
Otros transistores... 2SD473
, 2SD473H
, 2SD473K
, 2SD474
, 2SD474K
, 2SD475
, 2SD475A
, 2SD476
, 2SD1555
, 2SD476AK
, 2SD476K
, 2SD477
, 2SD478
, 2SD479
, 2SD48
, 2SD480
, 2SD481
.
