Биполярный транзистор 2SD476A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD476A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 35
Корпус транзистора: TO220
2SD476A Datasheet (PDF)
2sd476 2sd476a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A DESCRIPTION With TO-220C package Complement to type 2SB566/566A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMET
2sd476.pdf
2SD476(K), 2SD476A(K)Silicon NPN Triple DiffusedApplicationPower switching complementary pair with 2SB566(K) and 2SB566A(K)OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD476(K) 2SD476A(K) UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage VCEO 50 60 VEmitter to base voltage
2sd476n.pdf
isc Silicon NPN Power Transistors 2SD476NDESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I =2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2sd473.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD473DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and
2sd478.pdf
isc Silicon NPN Power Transistor 2SD478DESCRIPTIONCollector Power Dissipation: P = 30WCCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
2sd470.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD470DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050