2SD504 Todos los transistores

 

2SD504 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD504

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 3000

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SD504

 

2SD504 Datasheet (PDF)

1.1. 2sd5041.pdf Size:85K _usha

2SD504
2SD504

Transistors 2SD5041

5.1. 2sd5011.pdf Size:208K _update

2SD504
2SD504

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

5.2. 2sd5075t.pdf Size:116K _inchange_semiconductor

2SD504
2SD504

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5075T DESCRIPTION Ў¤ With TO-220C package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR

 5.3. 2sd5076.pdf Size:116K _inchange_semiconductor

2SD504
2SD504

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5076 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VC

5.4. 2sd5071.pdf Size:123K _inchange_semiconductor

2SD504
2SD504

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PML package Ў¤ High speed Ў¤ High breakdown voltage Ў¤ Built-in damper diode APPLICATIONS Ў¤ Color TV horizontal output application PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD5071 Ў¤ Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=2

 5.5. 2sd5070.pdf Size:232K _inchange_semiconductor

2SD504
2SD504

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500

5.6. 2sd5011.pdf Size:230K _inchange_semiconductor

2SD504
2SD504

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500

5.7. 2sd5074.pdf Size:254K _inchange_semiconductor

2SD504
2SD504

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5074 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter

5.8. 2sd5072.pdf Size:157K _inchange_semiconductor

2SD504
2SD504

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5072 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500

5.9. 2sd5075.pdf Size:116K _inchange_semiconductor

2SD504
2SD504

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5075 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VC

5.10. 2sd5032.pdf Size:207K _jilin_sino

2SD504
2SD504

www.DataSheet4U.com R 低频放大管壳额定的双极型晶体管 D5032 产品特性 ◆高耐压:VCBO=1500V ◆饱和压降低:VCE(sat)=3V(max.) ◆高开关速度:tf=1μS(max.) ◆高可靠性 ◆环保(RoHS)产品 主要用途 ◆彩色电视机行输出电路 引线端序号及等效电路 概述 3DD5032 是 NPN 双极型高反压大功率晶体管,制

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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