2SD504 Specs and Replacement

Type Designator: 2SD504

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO3

 2SD504 Substitution

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2SD504 datasheet

 ..1. Size:183K  inchange semiconductor

2sd504.pdf pdf_icon

2SD504

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD504 DESCRIPTION High DC current gain- h = 750 (Min) @ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. A... See More ⇒

 0.1. Size:85K  usha

2sd5041.pdf pdf_icon

2SD504

Transistors 2SD5041 ... See More ⇒

 9.1. Size:207K  jilin sino

2sd5032.pdf pdf_icon

2SD504

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 9.2. Size:189K  inchange semiconductor

2sd5072.pdf pdf_icon

2SD504

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5072 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RAT... See More ⇒

Detailed specifications: 2SD498, 2SD499, 2SD50, 2SD500, 2SD501, 2SD5018, 2SD502, 2SD503, TIP122, 2SD5041, 2SD5041O, 2SD5041P, 2SD5041Q, 2SD505, 2SD506, 2SD507, 2SD5071

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