2SD5075 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD5075
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TOP3
Búsqueda de reemplazo de transistor bipolar 2SD5075
2SD5075 Datasheet (PDF)
2sd5075.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5075DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd5075t.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5075T DESCRIPTION With TO-220C package High breakdown voltage High speed switching APPLICATIONS Color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base vo
2sd5072.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5072DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT
2sd5074.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5074DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd5071.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5071DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT
2sd5076.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5076DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd5070.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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