2SD529 Todos los transistores

 ..1. Size:199K  inchange semiconductor
 2sd529.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD529 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 320V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in operating in color TV receivers chopper su

 9.1. Size:186K  toshiba
 2sd526.pdf

 9.2. Size:118K  mospec
 2sd526.pdf

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 9.3. Size:69K  wingshing
 2sd525.pdf

2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 40 W Juncti

 9.4. Size:87K  jmnic
 2sd525.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD525 DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage VCEO=100V Low collector saturation volage VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION

 9.5. Size:531K  semtech
 st2sd526.pdf

ST 2SD526 NPN Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 80 V Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 4 A Collector Current IC 0.4 A Base Current IB O Power Dissipation (Tc = 25 C) PC 30 W O Junctio

 9.6. Size:167K  inchange semiconductor
 2sd526.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 DESCRIPTION With TO-220C package Complement to type 2SB596 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 20 25W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 E

 9.7. Size:207K  inchange semiconductor
 2sd523.pdf

isc Silicon NPN Darlington Power Transistor 2SD523 DESCRIPTION Collector-Emitter Breakdown V =80V(Min.) CE High DC Current Gain- h = 1000(Min.)@I = 3A FE C Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 3A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLU

 9.8. Size:213K  inchange semiconductor
 2sd525.pdf

isc Silicon NPN Power Transistor 2SD525 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4.0A CE(sat) C Complement to Type 2SB595 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for