2SD529 Datasheet and Replacement

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD529DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 320V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersu

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2SD525 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB595ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 40 W Juncti

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD525 DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage :VCEO=100V Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION

ST 2SD526 NPN Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit80 VCollector Base Voltage VCBO 80 VCollector Emitter Voltage VCEO 5 VEmitter Base Voltage VEBO 4 ACollector Current IC 0.4 ABase Current IB OPower Dissipation (Tc = 25 C) PC 30 WOJunctio

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 DESCRIPTION With TO-220C package Complement to type 2SB596 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 2025W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 E

isc Silicon NPN Darlington Power Transistor 2SD523DESCRIPTIONCollector-Emitter Breakdown V =80V(Min.)CEHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 3ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLU

isc Silicon NPN Power Transistor 2SD525DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4.0ACE(sat) CComplement to Type 2SB595Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for